1) rutherford scattering
卢瑟福散射
1.
This work discusses and compares the methods of deriving the Rutherford scattering formula,and analyses the Rutherford scattering in the low energy(e,2e) reactions through the study on electron impact ionization of helium.
讨论和比较了用不同理论方法导出卢瑟福散射公式;分析了低能电子入射单电离氦原子(e,2e)反应中的卢瑟福散射;尤其是通过卢瑟福公式给出了有效核电荷的表达式。
2.
Under the circumstances of shielding effect of extranuclear electron, the condition of the classics descriptions of Rutherford scattering formula is derived from the principle of uncertainty relation in the quantum mechanics.
用量子力学中不确定关系的原理,推出了在核外电子非屏蔽效应的情况下卢瑟福散射公式的经典描述的条件。
2) Rutherford backscattering spectroscopy
卢瑟福背散射
1.
The mixing effect of three different film/substrate systems, Ti/Al, Al/Ti and Ni/Ti, which were irradiated by intense pulsed ion beam, was studied with Rutherford backscattering spectroscopy (RBS).
采用卢瑟福背散射(Rutherford backscattering spectroscopy,RBS)方法对强脉冲离子束辐照Ti/Al、Al/Ti 和Ni／Ti三组薄膜/衬底体系所形成的混合层进行了研究。
3) RBS
卢瑟福背散射
1.
Analysis of the distribution of Rb in Ion-exchanged KTP Waveguide by RBS
卢瑟福背散射分析离子交换KTP波导的Rb元素分布
2.
Rutherford backscattering (RBS) spectrum was used to measure the Ti concentration depth profile in H13 steel after Ti ion implantation.
利用卢瑟福背散射谱测量了离子注入表面的成分 ,并采用逐层递推法得出了钛在H13钢中的浓度深度分布 ,借助掠面x射线衍射考察了注入表面的相结
3.
By synchrotron X-ray diffraction (XRD) and Rutherford back scattering(RBS),the microstructure evolution of oxidized Ni/Au contact to p-GaN annealed at different temperature in air are investigated.
用卢瑟福背散射(RBS)和同步辐射X射线衍射(XRD)研究了p-GaN上的Ni/Au电极在空气下不同温度合金后的微结构的演化,并揭示这种接触结构的欧姆接触形成机制。
4) Rutherford backscattering spectrometry
卢瑟福背散射
1.
Rutherford backscattering spectrometry (RBS) demonstrates that the concentration of Fe or N atoms varies gradually from the substrate to the surface through the whole thickness of the films.
卢瑟福背散射分析结果表明，铁、氮两种原子的密度沿膜厚度方向呈梯度变化。
5) Rutherford back scattering
卢瑟福背散射
1.
It was confirmed by Rutherford Back Scattering method that argon ions were implanted into the seed and found that the relative concentrations of the argon ions implanted were related to the implantation time.
卢瑟福背散射方法证实了经这种离子注入后,的确有一定数量的氩离子进入了食荚青豌种子,并发现注入种子的氩离子的相对浓度与注入的时间有关。
6) Rutherford backscattering
卢瑟福背散射
1.
The essential principle of Rutherford backscattering analysis is explained briefly.
对卢瑟福背散射分析的基本原理作了概要的介绍。
2.
This paper mainly discusses Rutherford Backscattering spectrometry .
0MeV的能区中 ,对质子轰击金靶、散射角为160°时的卢瑟福背散射离子能谱进行分析 ,并且测量出其微分散射截面 ,与计算出的理论值进行比较。
补充资料：卢瑟福背散射分析
分子式：
CAS号：
性质：基于带电粒子弹性散射的分析方法。这种弹性散射作用产生的出射粒子方向与入射方向的夹角接近180°，最初由卢瑟福作了理论分析和实验测量，故亦称卢瑟福背散射。可用于化合物成分分析，薄膜厚度测量，深度分布测量以及材料阻止本领测量等。
CAS号：
性质：基于带电粒子弹性散射的分析方法。这种弹性散射作用产生的出射粒子方向与入射方向的夹角接近180°，最初由卢瑟福作了理论分析和实验测量，故亦称卢瑟福背散射。可用于化合物成分分析，薄膜厚度测量，深度分布测量以及材料阻止本领测量等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条