This work discusses and compares the methods of deriving the Rutherford scattering formula,and analyses the Rutherford scattering in the low energy(e,2e) reactions through the study on electron impact ionization of helium.

Under the circumstances of shielding effect of extranuclear electron, the condition of the classics descriptions of Rutherford scattering formula is derived from the principle of uncertainty relation in the quantum mechanics.

The mixing effect of three different film/substrate systems, Ti/Al, Al/Ti and Ni/Ti, which were irradiated by intense pulsed ion beam, was studied with Rutherford backscattering spectroscopy (RBS).

Analysis of the distribution of Rb in Ion-exchanged KTP Waveguide by RBS

Rutherford backscattering (RBS) spectrum was used to measure the Ti concentration depth profile in H13 steel after Ti ion implantation.

By synchrotron X-ray diffraction (XRD) and Rutherford back scattering(RBS),the microstructure evolution of oxidized Ni/Au contact to p-GaN annealed at different temperature in air are investigated.

Rutherford backscattering spectrometry (RBS) demonstrates that the concentration of Fe or N atoms varies gradually from the substrate to the surface through the whole thickness of the films.

It was confirmed by Rutherford Back Scattering method that argon ions were implanted into the seed and found that the relative concentrations of the argon ions implanted were related to the implantation time.