1) Czochralski silicon
直拉硅
1.
Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon;
低起始温度的线性升温热处理对直拉硅中氧沉淀的影响
2.
FTIR study an VO_2 defect in fast neutron irradiated Czochralski silicon;
FTIR研究快中子辐照直拉硅中的VO_2
3.
Investigation of the Irradiation Defects in Fast Neutron Irradiated Czochralski Silicon;
快中子辐照直拉硅辐照缺陷的研究
2) CZSi
直拉硅
1.
FTIR Sudy on V_2 Defect in Fast Neutron Irradiated CZSi;
快中子辐照直拉硅中V_2的FTIR研究
2.
INVESTIGATION ON OXYGEN PRECIPITATION IN NCZSi;
氮气氛直拉硅中氧沉淀的研究
3.
Control and Utilization of Defect for CZSi Wafer;
直拉硅片杂质缺陷的控制与利用
3) Czochralski silicon
直拉单晶硅
1.
The cost of nitrogen-doped Czochralski silicon is lower than that of the Czochralski silicon.
掺氮直拉单晶硅的成本比普通直拉单晶硅的成本要低,掺氮直拉单晶硅的机械强度比普通直拉单晶硅的高,太阳电池片可以做的更薄,这些都有利于降低太阳电池的成本。
5) CzSi
直拉硅单晶
1.
Study of CZSi Characteristic Doped with Element Ge at Impurity Level;
直拉硅单晶中掺入等价元素锗可以有效地抑制氧施主，提高硅片机械强度，改善氧沉淀的状况。
补充资料：直拉(CZ)生长中的硅单晶
直拉(CZ)生长中的硅单晶
卿 直件以一Z)月几、山，卜月，’.户·‘手
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条