1.
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
2.
Investigation of Oxygen Precipitation and Internal Gettering in Czochralski Silicon;
直拉硅单晶的氧沉淀及内吸杂的研究
3.
Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;
直拉硅单晶的快速热处理（RTP）研究
4.
Defect Engineering in Czochralski Silicon Used for Large-scale Integrated Circuits;
大规模集成电路用直拉硅单晶的缺陷工程
5.
Simulation of CZ and Optimizaton of Cusp Magnetic Field Character;
勾形磁场中直拉硅单晶的模拟与磁场参数优化
6.
Effect of Vacancy on Nucleation for Oxygen Precipitation in Czochralski Silicon;
空位对直拉硅单晶中氧沉淀形核的作用
7.
Oxygen Precipitation Behaviors in Conventional and Nitrogen-codoped Heavily Arsenic-doped Czochralski Silicon;
普通和掺氮的重掺砷直拉硅单晶的氧沉淀行为
8.
Improvement of Φ8" Hot Zone for Φ8" CZSi and the Numeric Simulaion;
生长Φ8“直拉硅单晶Φ8”热场研究及数值模拟
9.
Influence on carbon and oxygen contents in CZ Si single crystals by improvement of thermal system of furnace
直拉硅单晶炉热系统的改造对氧、碳含量的影响
10.
Transmission Electron Microscopy Investigation of Oxygen Precipitation and Induced Defects in Czochralski Silicon;
直拉硅单晶中氧沉淀及其诱生缺陷的透射电镜研究
11.
THE MARKET FORECAST OF THE GRAPHITE MATERIAL FOR CHINA KEEPS PULLING THE SILICIUM SINGLE CRYSTAL FURNACE PERIOD IN"15";
"十五"期间中国直拉硅单晶炉用石墨材料的市场预测
12.
Microdefects and Defect Engineering of Iso-group Elements Doped Czochralski Silicon Used for Large-scale Integrated Circuits;
大规模集成电路用同族元素掺杂直拉硅单晶的微缺陷及其缺陷工程
13.
We made the Czochralski silicon single crystal with a diameter of 12 inches.
直径12英寸直拉单晶硅研制成功。
14.
Application of Nitrogen-doped Czochralski Silicon in Solar Cell;
掺氮直拉单晶硅在太阳电池中的应用
15.
Effects of Nitrogen and Vacancy on the Oxygen Precipitation in Czochralski Silicon;
氮和空位对直拉单晶硅中氧沉淀的影响
16.
Effects of Rapid Thermal Processing on Oxygen Precipitation and Internal Gettering in Czochralski Silicon;
快速热处理对直拉单晶硅中氧沉淀和内吸杂的影响
17.
Numerical Simulation of Heat, Momentum and Mass Transport in the Melt of Czochralski Silicon Single Crystal
直拉法单晶硅熔体内热量、动量及质量输运的数值模拟
18.
Effects of Nitrogen on Oxidation-Induced Stacking Faults in 300 mm CZ Silicon
300mm直拉单晶硅中的氮元素对氧化诱生层错的影响