1.
The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches
8英寸直拉硅单晶抛光片
2.
Investigation of Oxygen Precipitation and Internal Gettering in Czochralski Silicon;
直拉硅单晶的氧沉淀及内吸杂的研究
3.
Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;
直拉硅单晶的快速热处理（RTP）研究
4.
Investigation of the V_2 defect in fast neutron irradiated Czochralski silicon;
快中子辐照直拉硅中V_2的退火研究
5.
Investigation of a New Intrinsic Gettering Process for Large-diameter Czochralski Silicon Wafers;
大直径直拉硅片的一种新型内吸杂工艺研究
6.
Defect Engineering in Czochralski Silicon Used for Large-scale Integrated Circuits;
大规模集成电路用直拉硅单晶的缺陷工程
7.
Effect of High Temperature Hydrogen Annealing on Oxygen Behavior in Czochralski Silicon;
氢气氛下高温退火对直拉硅中氧的行为的影响
8.
Effect of Rapid Thermal Processing on Oxygen Precipitation Behavior in Czochralski Silicon;
快速热处理对直拉硅片氧沉淀行为作用
9.
Investigation of Oxygen Precipitation and Induced-Defects in Fast Neutron Irradiated Czochralski Silicon;
快中子辐照直拉硅中氧沉淀及诱生缺陷研究
10.
Simulation of CZ and Optimizaton of Cusp Magnetic Field Character;
勾形磁场中直拉硅单晶的模拟与磁场参数优化
11.
Effect of Vacancy on Nucleation for Oxygen Precipitation in Czochralski Silicon;
空位对直拉硅单晶中氧沉淀形核的作用
12.
Oxygen Precipitation Behaviors in Conventional and Nitrogen-codoped Heavily Arsenic-doped Czochralski Silicon;
普通和掺氮的重掺砷直拉硅单晶的氧沉淀行为
13.
Effect of Hydrogen Annealing on Oxygen Precipitation and Void in Czochralski Silicon;
氢退火对直拉硅中氧沉淀及空洞型缺陷的作用
14.
Investigation of the Irradiation Defects and Electrics Performance in Fast Neutron Irradiated Czochralski Silicon;
快中子辐照直拉硅的电学性能及辐照缺陷研究
15.
Improvement of Φ8" Hot Zone for Φ8" CZSi and the Numeric Simulaion;
生长Φ8“直拉硅单晶Φ8”热场研究及数值模拟
16.
Study of Impurities and Defects in Germanium Doped Czochralski Silicon for Photovoltaic Applications;
掺锗直拉硅中的杂质缺陷及其光伏应用研究
17.
Influence on carbon and oxygen contents in CZ Si single crystals by improvement of thermal system of furnace
直拉硅单晶炉热系统的改造对氧、碳含量的影响
18.
Behavior of Irradiation Donor After Annealing in Electron Irradiated CZ-Si
电子辐照直拉硅退火后辐照施主行为的研究