1) heavily doped Czochralski silicon
重掺杂直拉硅
2) heavily-doped Czochralski silicon
重掺直拉硅
3) heavily boron-doped Czochralski silicon
重掺硼直拉硅
4) heavily arsenic-doped CZ silicon
重掺砷直拉硅片
1.
Through the comparative investigation on oxygen precipitation behaviors in the heavily and lightly arsenic-doped n-type Czochralski(CZ) silicon wafers subjected to the two-step annealing successively at low temperature(450—800℃) and high temperature(1000℃),the effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped CZ silicon wafer have been elucidated.
通过对比研究重掺砷直拉硅片和轻掺n型直拉硅片经过低温(450—800℃)和高温(1000℃)两步退火的氧沉淀行为,阐明了低温退火对重掺掺砷直拉硅片的氧沉淀形核的作用。
6) NTDCZSi
中子嬗变掺杂直拉硅
补充资料：直拉(CZ)生长中的硅单晶
直拉(CZ)生长中的硅单晶
卿 直件以一Z)月几、山，卜月，’.户·‘手
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条