1) intergranular films
晶界薄膜
1.
Variable charge molecular dynamics simulations of the intergranular films in SiC
SiC晶界薄膜的变电荷分子动力学模拟
2) thin film grain-boundary
薄膜晶界
4) polycrystalline thin films
多晶薄膜
1.
SnTe polycrystalline thin films are deposited by the vacuum evaporation method from the former SnTe crystals, and their microstructure, electrical properties, and surface appearance are studied.
以制备的晶体为原料用真空蒸镀法制备了银灰色SnTe多晶薄膜,并对薄膜的显微结构、伏安特性及表面形貌进行了研究。
2.
In this paper,the absorption coefficient α(λ) ,the extinction coefficient k(λ) ,the refractive index n(λ) and the optical energy gap E g(λ) of CuInSe 2 polycrystalline thin films were studied by the properties of the reflection and transmission.
根据ＣｕＩｎＳｅ２多晶薄膜的反射特性和透射特性，研究了薄膜的吸收系数α（λ）、消光系数ｋ（λ）、折射率ｎ（λ）以及光学禁带宽度Ｅｇ。
3.
AlSb polycrystalline thin films are prepared by vacuum co-evaporation and post-annealing.
采用元素共蒸发法结合退火处理制成了AlSb多晶薄膜。
5) amorphous thin films
非晶薄膜
1.
60 O 3 (PZT) amorphous thin films were deposited on the fused silica substrates using a modified sol gel processing.
60 O3 (PZT)非晶薄膜 ,测量了 2 0 0～ 110 0nm的紫外可见近红外透射光谱 。
2.
52) amorphous thin films on vitreous silica substrates by RF magnetron sputtering were investigated by UV～VIS～NIR transmittance measurement in the wavelength range of 200～1100nm.
5 2 )非晶薄膜 ,并测量了 2 0 0～ 110 0nm的紫外 可见 近红外透射光谱 。
6) Crystal film
晶体薄膜
1.
On the basis of the theory of phonon Green s function,the phonon stru cture of simple cubic crystal film is studied,the lineshape formula of phonon Brillouin spectrum is deduced, and the numerical results are reported.
以声子格林函数理论为基础 ,研究了简立方晶体薄膜的声子结构 ,推导了简立方晶体薄膜的声子布里渊光谱的线形公式 ,并给出了数值计算的结果。
补充资料：晶界
分子式：
分子量：
CAS号：
性质：晶界是结构相同而取向不同晶体之间的界面。在晶界面上，原子排列从一个取向过渡到另一个取向，故晶界处原子排列处于过渡状态。
分子量：
CAS号：
性质：晶界是结构相同而取向不同晶体之间的界面。在晶界面上，原子排列从一个取向过渡到另一个取向，故晶界处原子排列处于过渡状态。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条