2) microcrystalline silicon thin film
微晶硅薄膜
1.
We also discussed the growth mechanism of the microcrystalline silicon thin films from the aspect .
实验采用等离子体增强化学气相沉积(PECVD)法在玻璃衬底上制备了微晶硅薄膜。
2.
Non-uniformity of microcrystalline silicon thin film deposited by VHF-PECVD along the growth direction was studied.
本文研究了采用VHF PECVD技术制备的微晶硅薄膜的纵向均匀性。
3.
The crystallization affected by annealing studied on microcrystalline silicon thin films fabricated on tantalum;
获得了可用于太阳能电池的微晶硅薄膜的最佳晶化参数。
3) microcrystalline silicon film
微晶硅薄膜
1.
Studies on surface roughness and growth mechanisms of microcrystalline silicon films by grazing incidence X-ray reflectivity;
微晶硅薄膜的表面粗糙度及其生长机制的X射线掠角反射研究
2.
Influence of silane concentration on microstructural and electrical properties of microcrystalline silicon films;
硅烷浓度对微晶硅薄膜微结构及电学性质的影响
3.
A spectroscopic ellipsometry study of the abnormal scaling behavior of high-rate-deposited microcrystalline silicon films by VHF-PECVD technique
椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为
4) Microcrystalline silicon thin films
微晶硅薄膜
1.
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
2.
Deposition conditions were optimized to improve the deposition rate of microcrystalline silicon thin films.
本文以微晶硅薄膜的沉积速率为重点，以优化沉积条件、提高微晶硅薄膜的沉积速率为目标，通过射频等离子体化学气相沉积(RF-PECVD)和甚高频等离子体化学气相沉积(VHF-PECVD)，系统地研究了沉积气压、射频功率、气体流量及硅烷浓度等沉积条件对薄膜的沉积速率、晶化率、择优晶向、晶粒大小、表面形貌、结构演化的影响，并对等离子体成膜机理、薄膜机构演变机理做了初步的探究。
3.
Microcrystalline silicon thin films prepared at different deposition parameters using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)技术制备了系列不同沉积条件的微晶硅薄膜。
5) μc-Si:H
微晶硅薄膜
1.
Hydrogenated microcrystalline silicon(μc-Si:H)films with a high deposition rate of 1.
使用热丝化学气相沉积技术制备微晶硅薄膜(沉积速度为1。
补充资料：稀土-铁族金属非晶薄膜磁光材料
分子式：
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
CAS号：
性质：用稀土和铁族金属制成的薄膜磁光材料其组成、电和磁性能及单轴各向异性受沉积条件及靶材成分影响。非晶态霍耳电压(VH)与磁场关系和极向克尔磁带回线相似，在补偿温度(Tcomp)附近，霍尔系数R1改变符号，当T<Tcomp时，R1为负，相反为正。其制备方法为高频溅射、真空蒸发、磁控溅射等。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条