1) CSiTF
晶硅薄膜
1.
As CSiTF solar cells has the capacity of reducing it s cost,it has become one of the hotspots in the field of solar cells.
介绍了晶硅薄膜太阳能电池衬底材料的现状 ,并描述实验室的颗粒硅带制备技
2) a-Si thin film
非晶硅薄膜
1.
An a-Si thin film diodes with big current densities and high on/off ratios was presented by PECVD technology.
报道了采用PECVD薄膜沉积技术制备的大电流、高开关比非晶硅薄膜二极管,在制备工艺温度低于200℃下,获得正向电流密度大于50A/cm-2,±3V偏压时开关比接近105的优质非晶硅薄膜二极管,完全符合三维集成电路(3D IC)中三维只读存储器(3D ROM)的要求。
4) amorphous silicon film
非晶硅薄膜
1.
Investigation of microstructure and photoelectric properties of boron-doped amorphous silicon films;
掺硼非晶硅薄膜的微结构和电学性能研究
2.
We developed a new process for low temperature crystallization of amorphous silicon films, by metal induced crystallization of amorphous silicon films at low temperature.
介绍了一种非晶硅薄膜低温晶化的新工艺———金属诱导非晶硅薄膜低温晶化。
3.
In this paper, the new process for crystallization of amorphous silicon films, named the metal induced lateral crystallization of amorphous silicon films at low temperatures, was developed.
本文研究了一种低温制备多晶硅薄膜的新工艺：金属诱导非晶硅薄膜低温晶化法。
5) polycrystalline silicon film
多晶硅薄膜
1.
Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films;
氢稀释对多晶硅薄膜结构特性和光学特性的影响
2.
Control of grain size during low-temperature growth of polycrystalline silicon films;
多晶硅薄膜低温生长中晶粒大小的控制
3.
The origin structure of a-Si∶H films is closely related to the recrystallizaiton temperature,the grain size and electrical properties of polycrystalline silicon films,which were formed by recrystallization annealing of a-Si∶H films.
用a -Si∶H薄膜经退火晶化成的多晶硅薄膜 ,其晶化温度、晶粒尺寸和电性能与薄膜的初始结构有密切关系 ,而a -Si∶H薄膜的初始结构依赖于沉积条件。
6) microcrystalline silicon thin film
微晶硅薄膜
1.
We also discussed the growth mechanism of the microcrystalline silicon thin films from the aspect .
实验采用等离子体增强化学气相沉积(PECVD)法在玻璃衬底上制备了微晶硅薄膜。
2.
Non-uniformity of microcrystalline silicon thin film deposited by VHF-PECVD along the growth direction was studied.
本文研究了采用VHF PECVD技术制备的微晶硅薄膜的纵向均匀性。
3.
The crystallization affected by annealing studied on microcrystalline silicon thin films fabricated on tantalum;
获得了可用于太阳能电池的微晶硅薄膜的最佳晶化参数。
补充资料：氮化硅晶须补强碳化硅陶瓷复合材料
分子式：
CAS号：
性质：以碳化硅陶瓷为基体，以氮化硅晶须为增强体的复合材料。它既保留了碳化硅陶瓷优良的耐高温、抗蠕变、抗氧化、抗化学腐蚀、耐磨等性能，又具有比碳化硅陶瓷更高的强度和韧性，最高使用温度可达1400℃以上。由于氮化硅晶须与碳化硅陶瓷基体具有较好的物理相容性，化学性质相近，界面的结合力较强。该复合材料的烧结温度高，界面控制困难，成本高，主要用于航空、航天领域的高温部件。
CAS号：
性质：以碳化硅陶瓷为基体，以氮化硅晶须为增强体的复合材料。它既保留了碳化硅陶瓷优良的耐高温、抗蠕变、抗氧化、抗化学腐蚀、耐磨等性能，又具有比碳化硅陶瓷更高的强度和韧性，最高使用温度可达1400℃以上。由于氮化硅晶须与碳化硅陶瓷基体具有较好的物理相容性，化学性质相近，界面的结合力较强。该复合材料的烧结温度高，界面控制困难，成本高，主要用于航空、航天领域的高温部件。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条