1) high-pressure chemical vapor deposition(HPCVD)
高压化学汽相沉积
2) atmospheric pressure chemical vapor deposition
常压化学汽相沉积
1.
This paper reports some investigation results about nanometer TiO x optical thin film prepared by atmospheric pressure chemical vapor deposition(APCVD),the influence of temperature on structure and refractive index of TiO x is discussed.
报道了用常压化学汽相沉积 (APCVD)工艺制备TiOx 纳米光学薄膜的研究结果 ,讨论了衬底温度对薄膜结构及折射率的影响 ,实验验证了太阳电池对光学减反射膜的理论要求 ,优化了工艺条件 ,制备的TiOx 纳米光学薄膜性能稳定 ,大面积颜色均匀一致。
2.
This paper reports some investigation results of nanometer TiOx optical thin film prepared by atmospheric pressure chemical vapor deposition(APCVD),analyzes the influence of temperature on constructure and refractive index of TiOx,the antireflection characteristics of TiOx deposited on polished wafers and textured wafers are dicussed,the optimal process is proposed.
报道用常压化学汽相沉积 (APCVD)工艺制备 Ti Ox纳米光学薄膜的研究结果 ,分析衬底温度对薄膜结构及折射率的影响 ,讨论在抛光硅片及绒面硅片上制备的 Ti Ox薄膜光学减反射特性 ,并优化了工艺条
3) chemical vapour deposition / piezoresistive effect
化学汽相沉积/压阻效应
4) low-pressure chemical vapor deposition(LPCVD)
低压化学汽相沉积
5) Chemical vapor deposition
化学汽相沉积
1.
in this paper, a novel technique of fabricating microlenses with spherical surface by laser chemical vapor deposition(LCVD)was introduced.
本文介绍了一种新颖的利用激光化学汽相沉积（ＬＣＶ）球面微透镜的技术。
2.
In this paper a technique of fabricating microlenses with spherical surface by laser chemical vapor deposition (LCVD) was introduced.
本文介绍了用激光化学汽相沉积(LCVD)球面微透镜的技术。
3.
In this paper, a technique of fabricating spherical surface microlenses by laser chemical vapor deposition (LCVD) was introduced.
介绍了用激光化学汽相沉积（ＬＣＶＤ）球面微透镜的技术。
6) CVD
化学汽相沉积
1.
In this paper the method of exhaust treament during the growthprocess of ZnSe using CVD is reported.
本文报道用化学汽相沉积法生长硒化锌多晶过程中尾气处理的方法。
2.
A continuous and pure crystalline film of β C 3N 4 with {221} textured characteristic has been grown using an ECR CVD (electron cyclotron resonance plasma enhanced chemical vapor deposition) process.
用电子回旋共振等离子体化学汽相沉积 (ECRCVD)法 ,在单晶硅 (10 0 )衬底上沉积生长出了具有 { 2 2 1}结构特性的连续的结晶态 β C3N4 薄膜。
3.
The recent progress on fabricating methods of SiC films using chemical vapor deposition(CVD)was introduced,and the structural characteristics and physical properties of the CVD-SiC films were also reviewed.
介绍了SiC薄膜的一种主要制备方法———化学汽相沉积(CVD)法制备SiC薄膜的近年研究进展,并对所制备薄膜的结构特征与物理性质进行了简要评述。
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条