1) hot-wall CVD
热壁化学汽相沉积
1.
GaN films were deposited on Si(111)substrates during the process of hot-wall CVD.
利用热壁化学汽相沉积在Si基上生长GaN薄膜。
2) hot-wall chemical vapor deposition
热壁化学气相沉积
1.
GaN films on Si substrates were obtained by hot-wall chemical vapor deposition and the growth condition during the process was investigated.
采用热壁化学气相沉积工艺在 Si(111)衬底上生长 GaN 晶体膜,并对其生长条件进行研究。
3) Rapid Thermal Chemical Vapor Deposition (RTCVD)
快速热化学汽相沉积(RTCVD)
4) Chemical vapor deposition
化学汽相沉积
1.
in this paper, a novel technique of fabricating microlenses with spherical surface by laser chemical vapor deposition(LCVD)was introduced.
本文介绍了一种新颖的利用激光化学汽相沉积（ＬＣＶ）球面微透镜的技术。
2.
In this paper a technique of fabricating microlenses with spherical surface by laser chemical vapor deposition (LCVD) was introduced.
本文介绍了用激光化学汽相沉积(LCVD)球面微透镜的技术。
3.
In this paper, a technique of fabricating spherical surface microlenses by laser chemical vapor deposition (LCVD) was introduced.
介绍了用激光化学汽相沉积（ＬＣＶＤ）球面微透镜的技术。
5) CVD
化学汽相沉积
1.
In this paper the method of exhaust treament during the growthprocess of ZnSe using CVD is reported.
本文报道用化学汽相沉积法生长硒化锌多晶过程中尾气处理的方法。
2.
A continuous and pure crystalline film of β C 3N 4 with {221} textured characteristic has been grown using an ECR CVD (electron cyclotron resonance plasma enhanced chemical vapor deposition) process.
用电子回旋共振等离子体化学汽相沉积 (ECRCVD)法 ,在单晶硅 (10 0 )衬底上沉积生长出了具有 { 2 2 1}结构特性的连续的结晶态 β C3N4 薄膜。
3.
The recent progress on fabricating methods of SiC films using chemical vapor deposition(CVD)was introduced,and the structural characteristics and physical properties of the CVD-SiC films were also reviewed.
介绍了SiC薄膜的一种主要制备方法———化学汽相沉积(CVD)法制备SiC薄膜的近年研究进展,并对所制备薄膜的结构特征与物理性质进行了简要评述。
6) Chemical vapor deposition CVD)
化学汽相沉积(CVD)
补充资料：等离子化学气相沉积
分子式：
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
CAS号：
性质：PCVD 化学气相沉积(CVD)法是制备无机材料，尤其是无机薄膜和涂层的一种重要手段。用等离子辅助CVD，可在较低的温度下沉积，涂层均匀不剥落。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条