1) bulk-Si CMOS devices
体硅CMOS器件
1.
A new method,pseudo-latchup path method, has been put forward that is based on latchup effects of bulk-Si CMOS devices .
从体硅CMOS器件的闭锁效应入手,提出了抑制闭锁的一种新方法——伪闭锁路径法。
3) CMOS devices
CMOS器件
1.
This paper presents the string elements for Single Event Latchup,and discusses the major characters and test method for Single Event Latchup of CMOS devices.
介绍了单粒子锁定现象的触发原理,探讨了针对典型CMOS器件SEL现象的主要特征和测试方法,并开展了几种CMOS器件的单粒子锁定试验研究。
2.
The partially depleted SOI CMOS devices and circuits with channel length of 0.
8μm部分耗尽绝缘体上硅(PDSOI)CMOS器件和电路,开发出成套的0。
3.
12μm gate length CMOS devices are fabricated.
在此基础上 ,采用Si3 N4/SiO2 stack栅介质制备出性能优良的栅长为 0 12 μm的CMOS器件 ,器件很好地抑制了短沟道效应 。
4) CMOS device
CMOS器件
1.
Comparison on effects of CMOS devices irradiated by gamma and X ray;
CMOS器件X射线与γ射线辐照效应比较
2.
Deep sub-micron CMOS device modeling and BSIM models;
深亚微米CMOS器件建模与BSIM模型
3.
In studying latchup window phenomena in bulk-Si CMOS devices,a new method for prevention of latchup has been discovered,which is called pseudo-latchup path method.
在研究体硅CMOS器件的闭锁窗口现象时,发现了一种新的抗闭锁方法———伪闭锁路径法。
5) post CMOS
后CMOS器件
1.
s:Several new devices which are the candidates of post CMOS devices possibly were introduced,including resonant tunneling transistors,single,electron transistors,CNTFETs,molecular devices and spin transistors.
介绍了几种后CMOS器件可能的候选器件:谐振隧道器件、单电子晶体管、碳纳米管晶体管、分子器件和自旋晶体管。
补充资料：氮化硅纤维增强体(见氮化硅纤维)
氮化硅纤维增强体(见氮化硅纤维)
silicon nitride fibres reinforcements
夔薰黔慧燃泳
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条