We demonstrate that micro-Raman spectroscopy (μRS) is a very useful technique that can be used to study a variety of problems related to Si device fabrication.

Accelerators simulation experiment on single event effects in semiconductor devices;

In order to improve the forward conduction characteristics of silicon semiconductor devices, a comprehensive study of the influences of boron diffusion, phosphorous diffusion, doping concentration distribution in P~+-P region of sintered Al-Mo electrode and the minority carrier life on the forward conduction characteristics is performed.

They have extensive application prospect in fields such as high brightness light emitting diodes,short wavelength laser diodes,high performance UV detector,and high temperature,high frequency,large power semiconductor devices.

Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method;

Research for incompetent sources of semiconductor devices which are not up to the standard in DPA;

A Galerkin-MMOCAA scheme for a semiconductor device simulation behavior of a semiconductor device;

The experimental method and results of measuring the Seebeck coefficient and electric resistivity of semiconductor silicon are introduced.

This paper models the carrier number in silicon semiconductor using the method of grand canonical ensemble and Fermi-Dirac statistical distributions.