1) HB-GaAs single ctystle
水平砷化镓单晶
2) GaAs single crystal
砷化镓单晶
1.
Plastic deformation induced by indentation in a GaAs single crystal was investigated using electron microscopy in the present experiment.
用电子显微镜研究了压痕诱发砷化镓单晶中的塑性变形。
2.
049N Vickers indentation in GaAs single crystal has been investigated using high-resolution electron microscopy.
０４９ Ｎ载荷 Ｖｉｃｋｅｒｓ压痕诱发砷化镓单晶的相转变进行了观察和研究，结果表明。
3) gallium arsenic phosphide single crystal
磷砷化镓单晶
4) indium gallium arsenic phosphide single crystal
磷砷化镓铟单晶
5) indium gallium arsenide single crystal
砷化镓铟单晶
6) gallium aluminum arsenide single crystal
砷化铝镓单晶
补充资料：水平布里奇曼法(见布里奇曼法生长单晶)
水平布里奇曼法(见布里奇曼法生长单晶)
horizontal Bridgman method
小十巾里苛曼法ho见布里奇曼法生长单晶。rlzontal Br主dglllan method
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条