1) Ge/Si Superlattices
锗硅超晶格
1.
Subwave Luminescence in Ge/Si Superlattices and Porous Silicon;
锗硅超晶格和多孔硅中的分波发光
2) poly-SiGe
多晶锗硅
1.
The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM.
采用金属Ni诱导与超高真空化学气相沉积(UHVCVD)相结合的方法,在热氧化硅衬底上生长了多晶锗硅薄膜。
3) SiGe bulk
硅锗单晶
1.
The distribution of impurity Ge in SiGe bulk single crystal which was grown by varying speed CZ was measured by using the SEM-EDS methods, and it was found that the Ge concentration varied from a lower value at head to a highter one at the tail of Si crystal which was doped Ge.
利用扫描电镜能谱分析法,对 CZ 法生长的掺锗浓度不同的硅锗单晶中锗浓度进行了测定,结果发现硅中锗的纵向分布是头部浓度较低,尾部锗浓度较高。
4) SiGe mixed crystal
锗硅混晶
5) polycrystalline SiGe
多晶硅锗
1.
Effects of hydrogenation for polycrystalline SiGe (poly-Si1-xGex) thin films were estimated by investigating the dark conductivity and activation energy that derive from the conductivity as a function of the temperature.
优化了热丝法氢处理多晶硅锗薄膜工艺条件。
补充资料：A和B交替生长的超晶格结构
A和B交替生长的超晶格结构
A和B交替生长的超晶格结构层厚：黑2帆A 白30A B中周科学院十导体研究所供稿
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条