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1)  reactively pulsed laser sputtering deposition
反应式脉冲激光溅射淀积
1.
The effect of laser energy density,pulsed frequency on the construction and properties of AlN thin films prepared by reactively pulsed laser sputtering deposition was discussed.
反应式脉冲激光溅射淀积制备氮化铝(AlN)薄膜的过程,讨论了激光脉冲能量密度及脉冲频率对所制备薄膜结构性能的影响,并对薄膜的化学稳定性作了比较详细的研究。
2)  reactively pulsed laser ablation
反应式脉冲激光溅射沉积
1.
AlN (Aluminum Nitride) polycrystalline films have been deposited by reactively pulsed laser ablation with plasmaassisted at low temperature.
使用等离子体辅助反应式脉冲激光溅射沉积薄膜的方法在Si(111)和Si(100)基片上已经成功地低温制备出AlN多晶膜。
3)  pulsed laser deposition
脉冲激光溅射沉积
4)  Pulsed laser deposition
脉冲激光溅射
1.
05+2 x +3 y fluoride films were prepared by pulsed laser deposition (PLD).
脉冲激光溅射法 (PLD) ,作为一种制备高质量薄膜的方法 ,被广泛地用于制备超导、铁电等薄膜。
5)  pulsed laser deposition
脉冲激光淀积
1.
1)O thin films were fabricated on Si substrates by pulsed laser deposition.
利用脉冲激光淀积的方法在Si衬底上生长出了c轴高度取向的ZnO和Zn_(0。
2.
Highly c-axis oriented ZnO thin films were fabricated on Si(111) substrates at different substrate temperatures by pulsed laser deposition .
在不同的衬底温度下,通过脉冲激光淀积的方法在Si衬底上生长出c轴高度取向的ZnO薄膜。
3.
Pb 0 72 La 0 28 TiO 3(PLT28) thin films have been prepared on Pt/Ti/SiO 2/Si substrates by pulsed laser deposition under various oxygen pressure.
利用脉冲激光淀积法在Pt Ti SiO2 Si衬底上制备了 2 8mol%La掺杂钛酸铅薄膜 。
6)  pulsed excimer laser deposition
脉冲激光淀积
1.
80)Ti_3O_(12)) were successfully grown on p-SiO_2 substrates by pulsed excimer laser deposition.
用脉冲激光淀积法成功地在p-S i底片上制备了高c轴取向的B i3。
2.
80Ti3O12 (BNT) were successfully grown on p-SiO2 substrates by pulsed excimer laser deposition.
用脉冲激光淀积方法在p-Si基片上制备了高c轴取向的Bi4–xRxTi3O12(BNT)铁电薄膜,研究了掺钕量x对薄膜铁电性能的影响,结果表明,当x=0。
补充资料:脉冲式反应堆
分子式:
CAS号:

性质:用于产生短持续时间强中子脉冲的反应堆。能在很短时间间隔内达到超临界状态,产生很高的脉冲功率和中子通量密度。可生产短寿命放射性同位素。进行肿瘤治疗、中子照相、活化分析及元件动态性能试验研究。美国通用原子公司设计的Triga堆是一种结构简单、安全可靠、操作方便的脉冲反应堆。它的脉冲通量可高达1016~1017/(cm2·s) ,脉冲次数一般每小时3~18次。

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