1) Si-based quantum dot devices
硅基量子点器件
2) QD
量子点器件
3) silicon based optoelectronic devices
硅基光电子器件
4) silicon photonic devices
硅基光子器件
1.
Stimulated by the ever-increasing demands of wide-bandwidth in optical communication and highperformance computing in microprocessor,silicon photonic devices are entering into the integrated and low-cost trend,and series of significant breakthrough both in theory and technology are achieved.
光通信对高带宽要求的不断增强以及计算机芯片对高性能计算的不断需求刺激了硅基光子器件的发展,使之向集成化、低成本方向发展,并取得了一系列重要的理论和技术突破。
5) Si-based SiC quantum dots
硅基碳化硅量子点
6) silicon quantum dot
硅量子点
1.
Using the LPCVD method with SiH_4 gas, we have accumulated the half-sphere silicon quantum dots in self-assembled and nano-sized on a silica glass substrate.
用减压气相淀积法(LPCVD),在二氧化硅以及石英基板上自组织形成了高密度的(10~(11)cm~(-2))纳米尺寸的半球状硅单晶粒(硅量子点),并进一步利用自组织生成的硅量子形成具有悬浮栅极的MOS单元,验证了硅量子点的量子效应。
2.
Using the low pressure CVD method with SiH 4 gas, we have accumulated the silicon quantum dots in self assembled and nano sized on a silica glass substrate.
用 Si H4 气体的减压 CVD法 ,在氧化硅以及石英基板上自然形成了高密度的 (~ 10 11cm-2 )纳米尺寸的半球状硅晶粒 (硅量子点 ) ,并且对其光学吸收和发光 (Photo- luminescence,PL)特性进行了评价。
补充资料:9-三甲硅基-6-[(三甲硅基)氧]基-9H-嘌呤
CAS: 17962-89-9
分子式: C11H20N4OSi2
中文名称: 9-三甲硅基-6-[(三甲硅基)氧]基-9H-嘌呤
英文名称: 9-(trimethylsilyl)-6-[(trimethylsilyl)oxy]-9H-Purine
O6,9-bis(Trimethylsilyl) hypoxanthine
9-(trimethylsilyl)-6-[(trimethylsilyl)oxy]-9h-purin
分子式: C11H20N4OSi2
中文名称: 9-三甲硅基-6-[(三甲硅基)氧]基-9H-嘌呤
英文名称: 9-(trimethylsilyl)-6-[(trimethylsilyl)oxy]-9H-Purine
O6,9-bis(Trimethylsilyl) hypoxanthine
9-(trimethylsilyl)-6-[(trimethylsilyl)oxy]-9h-purin
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条