1) quantum devices
量子器件
1.
With the advances in ultra\|thin film epitaxial growth and micro\|fabrication,many semiconductor quantum devices have been developed.
随着半导体材料超薄层外延生长和微细加工技术的进展 ,人们已研制成功多种多样的半导体量子器件 。
2.
With the development of micro-fabrication techniques and nano-scale science and technology, quantum devices will be the basis of the next generation integrated circuits.
随着微细加工技术与纳米科技的发展,量子器件必将成为下一代集成电路的基础。
2) quantum device
量子器件
1.
Suggestions on establishing state key nano-technology laboratory and funding basic research in nano-quatum structure,quantum device and ntegrated technology;
抓住时机紧急布署纳米量子结构、量子器件及其集成技术的基础研究
2.
Recent development in nano-CMOS device,nanoelectronic device and quantum device were introduced.
介绍了纳米CMOS器件、纳米电子器件和量子器件的发展动态,提出以信息载体来分类纳米器件的方式。
3.
The inevitability of quantum device and quantum information technology’sinvention and development is implied form the analysis of informational society’s development.
从信息社会的发展分析提出了量子器件及量子信息技术产生和发展的必然性,介绍了谐振隧穿器件、单电子器件、电子波导晶体管等纳米电子器件及其特点,对量子激光器和量子信息技术及其性能作了简要介绍,并给出了应用前景。
3) QD
量子点器件
4) GaAs based quantum device
GaAs基量子器件
6) quantum-sized functional device
量子功能器件
1.
In this article,the methods of preparation,the growth mechanism of nano-crystalline of silicon in the films,the mechanism of conduction and luminescence,the applications as a quantum-sized functional device in ultra-large scale integrated circuits are reviewed-Its current problems and future directions discussed.
简单地综述了国内外有关nc-Si:H薄膜的制备方法、导电机理、发光机理及其应用于量子功能器件等方面的研究工作。
补充资料：超导量子干涉器件（superconductingquantuminterferencedevices(QSUID)）
超导量子干涉器件（superconductingquantuminterferencedevices(QSUID)）
在磁场中约瑟夫森结两侧超导体的电子对的宏观量子波函数的位相差，受到磁场的空间调制而有变化，这就导致约瑟夫森电流的相干性使隧道电流Ic(H)有类似于光学中的干涉现象。例如有外磁场时的直流约瑟夫森效应中可出现类似于光学中单缝衍射图象就是这样。利用此类相干性制成的器件称超导量子干涉器件，例如直流SQUID和射频SQUID，可大为提高对磁场的灵敏度和分辨率。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条