1) InP based InAlAs/InGaAs HEMT
InP基InAlAs/InGaAs HEMT
2) RTD/HEMT type RTT
RTD/HEMT型RTT
3) AlGaN/GaN HEMTs
AlGaN/GaN HEMT
1.
AlGaN/GaN HEMTs Power Amplifier MIC with Powercombining at C-Band;
基于AlGaN/GaN HEMT的C波段功率放大器混合集成电路的设计
2.
AlGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band;
基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计(英文)
3.
Performance of AlGaN/GaN HEMTs with Different Layout;
AlGaN/GaN HEMTs器件布局对器件性能影响分析
4) Si /Si1-xGex HEMT
Si/Si1-xGex HEMT
6) HEMT oscillator
HEMT振荡器
1.
A compact Ku-band HEMT oscillator has been designed using Agilent Advanced Design System(ADS).
采用ADS设计了一种Ku波段的小型化HEMT振荡器,采取了共栅电路形式。
补充资料:indium phosphide (inp)
CAS:22398-80-7
中文名称:磷化铟;磷化铟晶体INP
英文名称:indium phosphide;indium monophosphide;indium phosphide (inp)
中文名称:磷化铟;磷化铟晶体INP
英文名称:indium phosphide;indium monophosphide;indium phosphide (inp)
说明:补充资料仅用于学习参考,请勿用于其它任何用途。
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