1) minority carrier lifetime
少数载流子寿命
1.
The minority carrier lifetime ( τ ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device.
太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。
2.
A new method of microwave reflectance applied in measurement for the minority carrier lifetime in HgCdTe is introduced.
介绍了用微波反射法测量HgCdTe中的少数载流子寿命 ,分析了其测量原理 ,并与接触式的光电导衰减法进行了对比。
3.
Through measuring I-V character of solar cells, short circuit current and open circuit voltage and series resistant and shunt resistant could be gained, and then minority carrier lifetime and dark saturation current are calculated by the new method.
本文通过对测试少数载流子寿命的各种方法进行分析后提出了一种新的测量成品太阳电池基区少数载流子寿命的方法,这种方法通过分析太阳电池的Ⅰ-Ⅴ特性得到基区少数载流子寿命与太阳电池开路电压、短路电流的关系。
2) Reduction of minority carrier lifetime
少数载流子寿命下降
3) effective lifetime of minority carrier
少数载流子有效寿命
1.
The main surface passivation methods for silicon solar cells at present were compared according to effective lifetime of minority carrier in Si wafers, reflection losses and spectral response of silicon solar cells.
通过对硅片的少数载流子有效寿命、硅太阳电池的反射损失和光谱响应这三个方面的研究,比较了目前主要的硅太阳电池表面钝化技术,对这些钝化技术的优缺点进行了分析和评价。
4) excess minority-carrier lifetime
过剩少数载流子寿命
5) carrier lifetime
载流子寿命
1.
A New Method of Extraction Carrier Lifetime for IGBT n-Layers;
提取IGBT外延层载流子寿命的新方法(英文)
2.
The average carrier lifetimes are 168.
用微波反射光电导衰减法(-μPCD)分别在300 K和85 K温度下测量了用分子束外延技术生长的p-InP/n-InGaAs/n-InP双异质结中掺杂InGaAs吸收层的载流子寿命分布图,并详细论述了这种测试技术的理论基础。
3.
The influences of the injection current and carrier lifetime of semiconductor optical amplifier(SOA) on the switching window of ultrafast nonlinear interferometer(UNI) were studied by proceeding simulation and experiment.
对影响超快非线性干涉仪(UNI)开关窗口的半导体光放大器(SOA)的注入电流及载流子寿命进行了数值模拟实验研究。
6) Minority carrier lifetime
少子寿命
1.
The minority carrier lifetime(τ) scan mapping along the multicrystalline ingot was obtained by means of Microwave Photo Conductive Decay (μ-PCD).
应用微波光电导衰减仪(μ-PCD)测得了铸造多晶硅硅锭沿生长方向少子寿命的分布图。
2.
All these three ways can improve the minority carrier lifetime effectively.
三种吸杂方式都能明显提高多晶硅的少子寿命。
3.
The effects of surface thermal oxidation on the minority carrier lifetime of Czochralski (CZ) silicon wafers are investigated by photoconductive decay (PCD) method.
用高频光电导衰减法 (PCD)研究了热氧化钝化对直拉硅少子寿命的影响 。
补充资料：少数载流子（minoritycarrier）
少数载流子（minoritycarrier）
同一种半导体材料中与多数载流子带相反电荷的载流子。如n型半导体中的空穴和p型半导体中的电子均为少数载流子。热平衡条件下，非简并半导体中电子浓度n与空穴浓度p满足
`np=n_i^2CT^3e^{-\frac{E_g}{KT}}`
其中ni为本征载流子浓度，Eg为禁带宽度。T为温度。因此在本征激发尚不显著的温度范围内，多数载流子浓度可以近似认为与掺杂浓度相等，基本不随温度而改变。少数载流子浓度随温度升高而迅速增加。对于同种半导体，掺杂浓度越高，少数载流子浓度越低。对于相同掺杂浓度，材料的禁带宽度Eg越大，少数载流子浓度越低。虽然热平衡少数载流子对电导的作用较小，但非平衡少数载流子对电导的作用较小，但非平衡少数载流子，如pn结正向注入的非平衡少数载流子，对器件的工作起支配作用。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条