1) minority carrier concentration
少数载流子浓度
1.
In this paper the minority carrier concentration is calculated analytically with the varying of the temperature T,Ge fraction x and doping concentration.
采用解析的方法计算了少数载流子浓度与Ge组分x、温度T以及掺杂浓度N的关系。
2.
In this paper, the intrinsic carrier concentration, the minority carrier concentrationand the ratio of hole concentration to impurity concentration are calculated analyticallywith the varing of the temperature T, Ge fraction x and doping concentration.
本文在前人研究的基础上，利用解析方法研究了应变Si_(1-x)Ge_x层中本征载流子浓度、少数载流子浓度、p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系。
2) minority-electron density
少数载流子电子密度
3) minority carrier
少数载流子
1.
A modified photo-induced open-circuit voltage decay method has been developed to measure the photo-generated minority carrier lifetime in HgCdTe photovoltaic detectors.
采用改进的光致开路电压衰退方法测量了不同组分Hg1-xCdxTe光伏探测器中光生少数载流子寿命。
2.
On the basis of analysis on the diffusion of minority carrier and the equivalent circuit of the LAPS, the effects of various parameters on LAPS are deduced, and a basis for fabrication of high performance LAPS is set.
详细阐述了LAPS的基本构造 ,并通过分析LAPS的电路模型及少数载流子的影响得出了各种参数对LAPS的影响 ,从而为制造高性能的LAPS提供了理论基础。
3.
The fundamental principle and calculation method to measure the minority carrier diffusion length,lifetime and bulk Fe content by surface photovoltage method were introduced.
介绍了用表面光电压(SPV)法测试少数载流子的扩散长度、少子寿命和体Fe含量的基本原理及其计算方法,分析了三种常见外延结构中少子扩散长度的测试方法及其影响因素,得出了用于表面光电压测试的外延片及衬底片应满足的条件。
4) Carrier concentration
载流子浓度
1.
the relationship between two-wave coupling gain and carrier concentration in photorefractive LiNbO3 crystal is analyzed.
测量了不同Ｃｅ掺杂浓度Ｃｅ：ＬｉＮｂＯ３晶体二波耦合指数增益与载流子浓度的关系，实验结果与理论分析一致。
2.
37×10-4Ω·cm,carrier concentration of 1.
本研究中用电阻加热反应蒸发的方法制备ITO薄膜,测试了膜的厚度、电阻率、可见光透过率、载流子浓度和迁移率,讨论薄膜的厚度对薄膜光电性能的影响。
5) carrier density
载流子浓度
1.
Based on coupling-wave equation,two-segment DFB lasers have been analyzed,and implicit expression of their carrier density and emission wavelength has been obtained.
利用耦合波方程 ,对两段式DFB激光器进行理论分析 ,得出了激光器激射工作时两段载流子浓度和激射波长之间所满足的隐含表达式。
6) minority carrier diffusion
少数载流子扩散长度
补充资料：少数载流子
分子式：
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
CAS号：
性质：在掺杂半导体，即非本征半导体中，对电导贡献很小的载汉子，简称少子，如n型半导体的空穴，p型半导体的电子。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条