1) fluorinated tunneling-oxide
F化隧穿氧化层
2) tunnel oxide
隧穿氧化层
3) tunnel oxide
隧道氧化层
1.
Degradation of tunnel oxide in E~2PROM under constant current stress;
恒流应力下E~2PROM隧道氧化层的退化特性研究
2.
Plasma damage-induced EEPROM failures have been investigated The reason in fabricate process have been analysed from tunnel oxide,device structure,PECVD,plasma etch.
文章讨论了等离子体损伤造成的EEPROM电路失效,从隧道氧化层质量、器件结构、PECVD、等离子体腐蚀几方面分析了工艺中造成等离子体损伤的原因。
4) oxide film breakdown
氧化层击穿
1.
Dielectric oxide film breakdown mechanism of IC device in human body model;
HBM模型中IC器件氧化层击穿机理
5) altra-thin tunnel oxide
超薄隧道氧化层
6) gate oxide soft breakdown
栅氧化层软击穿
1.
The failure mechanism of gate oxide soft breakdown (as MOSFETs main failure mode) under electromagnetic pulse stress is analyzed,and it is obtained that this agrees to degradation failure model based on stochastic process.
通过分析电磁脉冲应力下,栅氧化层软击穿(MOS器件主要失效模式)的失效机理,得出结论:它符合基于随机过程的退化失效模型。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条