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1)  Ge/Si quantum-well
Ge/Si量子阱
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2)  Ge/Si quantum dots
Ge/Si量子点
3)  SiGe quantum dots
Si Ge量子点
1.
A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/poly-Si floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing.
提出了一种用于半导体闪速存储器单元的新的Si/Si Ge量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制。
4)  Si-based Ge Quantum-dots
Si基Ge量子点
5)  SiGe/Si quantum well
SiGe/Si量子阱
1.
The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested.
本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。
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6)  SiGe/Si MQW
SiGe/Si多量子阱
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补充资料：单量子阱(见量子阱)


单量子阱(见量子阱)
single quantum well

单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条