1) dip coating
提拉涂胶
1.
Two coating techniques,dip coating and spin coating,which have been broadly used at present,were introduced.
对于提拉涂胶,选择粘度较高的光刻胶溶液与合适的提拉速度将有助于减小Marangoni流动和Van derWaals力对膜厚均匀性的影响;对于旋转涂胶,可以通过密封基片所在空间,或者通过气流控制器使基片上方空气流动处于层流状态来获得均匀一致的溶剂挥发速率,从而提高胶层的均匀性。
2) dip-coating
提拉
1.
Sol-gel dip-coating technique for preparation of ITO thin film;
溶胶-凝胶提拉法制备ITO透明导电膜
3) Czochralski method
提拉法
1.
Tetragonal scheelite-type cadmium gadolinium tungstate CdGd2(WO4)4, CGW single crystal was grown by the Czochralski method.
用提拉法生长了四方晶系白钨矿结构的钨酸钆镉[CdGd2(WO4)4,CGW]晶体。
2.
GdVO4 single crystals weighted more than 50g along a-axis and c-axis were grown by Czochralski method.
采用提拉法沿a轴和c轴生长出无色透明的GdVO4单晶,质量均超过50g。
3.
03%in mass):LiNbO 3crystals with various[Li]/[Nb]ratios were grown by the Czochralski method from melts having compositions varying between 48.
03%的氧化铁(Fe2O3),用提拉法技术生长出高光学质量的具有不同摩尔比n(Li)/n(Nb)的Ce:Fe:LiNbO3晶体。
4) Czochralski
提拉法
1.
Modeling of Czochralski Single Crystal Growth Process Using Neural Network;
基于神经网络的提拉法钛单晶生长过程建模
2.
Single Crystal Growth of LiGaO_2 by Czochralski Method and Defects Characterization;
提拉法生长镓酸锂晶体及缺陷研究
3.
Nd:YAP and Tm:YAP crystal of b axis were grown by the Czochralski method,and the problem of crack was resolved by the optimum of thermal field,technical parameters of growth and cutting process.
采用提拉法生长了b轴方向的掺钕和掺铥铝酸钇(Nd:YAP和Tm:YAP)晶体,通过温场系统、生长工艺参数和切割工艺的优化,克服了晶体开裂的问题,晶体直径达到46mm;通过真空退火工艺,既显著减轻了紫外和可见区的色心吸收,又减小了晶体的应力,有助于克服晶体在加工过程中的开裂问题。
5) CZ method
提拉法
1.
A high quality sapphire with directions of[a-axis] and [0001][c-axis] was grown by CZ method.
本实验采用提拉法,在中频感应加热单晶炉内,进行了不同生长方向蓝宝石晶体的生长工作,分别取[11-20]和[0001]生长的晶体c面(0001)的晶片。
2.
A Nd: GGG crystal was grown by CZ method.
本文采用提拉法(CZ)生长了Nd:GGG晶体,并从理论上讨论了包裹物、提拉速度、晶体转速和降温速率等因素对晶体开裂的影响,最后给出了生长无开裂Nd:GGG晶体的最佳工艺参数:径向温度梯度越小越好,纵向温度梯度在0。
3.
Large size PbWO4 crystal ingots 35 mm×250 mm with no macro-defects by CZ method with RF h eating had been produced,and these ingots' impurity,defects and lengthways tra nsparency could be avoided.
用中频感应加热提拉法成功地生长了无宏观缺陷的大尺寸钨酸铅晶体(PWO),其晶体尺寸为35mm×250mm;确定了晶体生长工艺,其参数为籽晶取向犤001犦、提拉速度1。
6) dip-coating
浸渍-提拉
参考词条
补充资料：分开涂胶法
分子式：
CAS号：
性质：双组分胶黏剂涂胶时，两组分分别涂于两个被粘物表面上，将两者涂有胶的胶面叠合在一起即可形成胶接。
CAS号：
性质：双组分胶黏剂涂胶时，两组分分别涂于两个被粘物表面上，将两者涂有胶的胶面叠合在一起即可形成胶接。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。