Sol-gel dip-coating technique for preparation of ITO thin film;

Tetragonal scheelite-type cadmium gadolinium tungstate CdGd2(WO4)4, CGW single crystal was grown by the Czochralski method.

GdVO4 single crystals weighted more than 50g along a-axis and c-axis were grown by Czochralski method.

03%in mass):LiNbO 3crystals with various[Li]/[Nb]ratios were grown by the Czochralski method from melts having compositions varying between 48.

Modeling of Czochralski Single Crystal Growth Process Using Neural Network;

Single Crystal Growth of LiGaO_2 by Czochralski Method and Defects Characterization;

Nd:YAP and Tm:YAP crystal of b axis were grown by the Czochralski method,and the problem of crack was resolved by the optimum of thermal field,technical parameters of growth and cutting process.

A high quality sapphire with directions of[a-axis] and [0001][c-axis] was grown by CZ method.

A Nd: GGG crystal was grown by CZ method.

Large size PbWO4 crystal ingots 35 mm×250 mm with no macro-defects by CZ method with RF h eating had been produced,and these ingots' impurity,defects and lengthways tra nsparency could be avoided.