1)  InGaAsP
InGaAsP
1.
Room temperature lasing properties of 1.55 μm InGaAsP microdisk semiconductor lasers;
1.55μm波长InGaAsP微盘半导体激光器的室温激射性质
2.
Temperature Dependence of Oscillation Wavelength in 808nm InGaAsP SQW Lasers;
808nmInGaAsP单量子阱激光器激射波长的温度依赖性
3.
Selective Wet Etching of InGaAs/InGaAsP in HCl/HF/CrO_3 Solutions:Application to Vertical Taper Structures;
HCl/HF/CrO_3溶液对InGaAs/InGaAsP的选择性湿法刻蚀——应用于楔形结构的制备
2)  InP/InGaAsP
InP/InGaAsP
1.
Inductively coupled plasma etching of two-dimensional InP/InGaAsP-based photonic crystal;
感应耦合等离子体刻蚀InP/InGaAsP二维光子晶体结构的研究
2.
Experimental research on dispersion characteristics of strip InP/InGaAsP-MQW-EAM;
条形InP/InGaAsP-EAM的色散特性实验研究
3.
Study of Polarization Dependent Loss on Performances of InP/InGaAsP-EAM Based on M-Z Interferometer;
应力对M-Z型InP/InGaAsP-EAM偏振相关损耗的影响
3)  InGaAsP/InP
InGaAsP/InP
1.
The Fabrication of 10 ×10 InGaAsP/InP Array Waveguide Grating;
10×10InGaAsP/InP阵列波导光栅器件的研制
4)  InGaAs/InGaAsP
InGaAs/InGaAsP
1.
Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers;
长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备
2.
Quantum well intermixing of InGaAs/InGaAsP laser－ structure using ion implantation;
用离子注入的方法实现InGaAs/InGaAsP激光器材料的量子阱混合
3.
BAND-GAP BLUE SHIFT BY ION IMPLANTATION IN InGaAs/InGaAsP QUANTUM-WELL LASER-STRUCTURE;
InGaAs/InGaAsP量子阱激光器材料带隙蓝移研究
5)  InGaAsP-InP
InGaAsP-InP
1.
The temperature characteristics of 808 nm InGaAsP-InP SQW lasers have been investigated in a heat-tight system by analyzing their structure.
从InGaAsP-InP单量子阱激光器结构分析入手,采用自行设计的热封闭系统对808nmInGaAsP-InP单量子阱激光器热特性进行了研究·实验表明,在23-70℃的温度范围内,器件的功率由1。
6)  GaInAs/InGaAsP quantum well laser
GalnAs/InGaAsP
参考词条
补充资料：indium phosphide InP
分子式：  InP 
CAS号：

性质：沥青光泽的深灰色晶体。熔点1070℃。熔点下离解压为2.75MPa。极微溶于无机酸。介电常数10.8。电子迁移率4600cm2/(V·s)。空穴迁移率150cm2/(V·s)。具有半导体的特性。由金属铟和赤磷在石英管中加热反应制得。用作半导体材料，用于光纤通信技术。

说明：补充资料仅用于学习参考，请勿用于其它任何用途。