1) InGaAsP/InP double heterostructures
InGaAsP/InP双异质结构
2) InGaAsP/InP heterostnjcture
InGaAsP/InP异质结构
3) InGaAsp/InP heterojunction
InGaAsp/Inp异质结
4) InP heterostructure
InP异质结
5) InP double heterojunction bipolar transistor
InP双异质结双极晶体管
1.
A physical model of small-signal InP double heterojunction bipolar transistor(DHBT) is developed,which takes into account the base-emitter and collector-emitter metalisations by using two additional capacitances C_mb and C_mc.
研究了InP双异质结双极晶体管(DHBT)的能带结构对集电极电容的影响,解决了传统方法不能准确提取InPDHBT集电极电容的问题。
6) double heterostructure
双异质结构
1.
So a compromise has to be made between the improvement of the two-dimensional electron Gas confinement and the restraint of the carrier density in parasitic channel in designing the double heterostructure.
首先通过一维自洽求解薛定谔/泊松方程,研究了AlGaN/GaN双异质结构中AlGaN背势垒层Al组分和厚度对载流子分布特性的影响。
补充资料：结构镜质体(镜质组)
结构镜质体(镜质组)
14．结构镜质体(镜质组，
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条