This paper deduces the formula of the multi—quantum well laser s optimal well numbers.

The cross-saturation characteristics of GaN quantum well lasers are theoretically calculated and analyzed based on the analyses of the energy band structure and the transition matrix elements of GaN.

In this paper,the current modulation characteristics of a high power GaAs/GaAlAs quantum well laser in low frequencies(100Hz～20KHz)were experimentally investigaed in the first time.

Study on the chaotic synchronization communication of different structure SCH quantum well lasers;

At the same time,a multi-quantum well laser is used as laser LED,which makes the carrier frequency have a wide range(0~20 MHz),and so enhances the frequency bandwidth and dynamical range of PGC demodulation.

This paper introduced progress in optoelectronics disp la y technology, optoelectronics devices used in optical communication, high-densi ty photomemory, and quantum-well laser at home and abroad.

Aiming at the high-power laser,the vertical far-field divergence angle was reduced by the very narrow waveguide and the mode expanding waveguide structures,a simplified model of the far-field distribution of quantum-well lasers with a very narrow waveguide structure and the theoretical value of the vertical divergence angle were achieved,the vertical divergence angle was reduced to 2.