1) nanometer CMOS IC
纳米CMOS集成电路
1.
The current situation and development of nanometer CMOS IC semiconductor manufacturing engineering in Japan,USA and other countries were investigated,and an analysis of the strategy,current technology situation of semiconductor manufacturing in these countries were made.
论述了日美等国纳米CMOS集成电路半导体制造工艺的现状和发展趋势,分析说明国外半导体制造技术的战略和发展状况;结合90 nm CMOS工艺设计的超大规模SOC芯片的实践,对纳米CMOS集成电路设计技术进行分析;阐述SOC设计面临的技术难题,并对今后的发展趋势进行了预测。
3) CMOS integrated circuit
CMOS集成电路
1.
An analysis of latch-up characteristics and latch-up windows in CMOS integrated circuits;
CMOS集成电路的闭锁特性和闭锁窗口分析
2.
The methods to improve the stability of CMOS integrated circuit and silicon controlled rectifier circuit are given in the paper.
通过两个抢答器电路的分析和实践，给出了提高CMOS集成电路和可控硅电路稳定性的方法。
4) CMOS integrated circuits
CMOS集成电路
1.
The Analysis and Design of Radiation-Hardened CMOS Integrated Circuits;
CMOS集成电路的抗辐射分析及设计
5) CMOS IC
CMOS集成电路
1.
A Study on Methodology for Glitch Power Analysis in CMOS IC s;
CMOS集成电路中Glitch Power的分析方法研究
2.
Study on the mechanism of Latch-up effect in CMOS IC and its countermeasures;
CMOS集成电路闩锁效应的形成机理和对抗措施研究
3.
Considerations on Hot-Carrier Effects in the Design of Deep Submicron CMOS IC s;
深亚微米CMOS集成电路抗热载流子效应设计
6) Nanometer scale CMOS circuits
纳米级CMOS电路
补充资料：BiCMOS集成电路