1) edge direct tunneling current
边缘直接隧穿电流
1.
Simulation of the off-state gate current,drain current and substrate current in nano-scale MOSFET indicated that the edge direct tunneling current(IEDT) was far larger than conventional gate induced drain leakage current(IGIDL),subthreshold leakage current(ISUB),and band-to-band tunneling current(IBTBT),thus becoming the dominating off-state leakage current.
对纳米MOSFET关断态的栅电流、漏电流和衬底电流进行了模拟,指出边缘直接隧穿电流(IEDT)远远大于传统的栅诱导泄漏电流(IGIDL)、亚阈区泄漏电流(ISUB)及带间隧穿电流(IBTBT)。
2) The edge tunneling current
边缘隧穿电流
3) Direct tunneling current
直接隧穿电流
4) direct tunneling gate current
直接隧穿栅电流
5) direct tunneling
直接隧穿
1.
The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier,which are accurately solved using the one-dimensional time-independent Schrdinger equation.
通过精确求解一维定态薛定谔方程得到电子通过三角形势垒的隧穿几率,模拟了SiC肖特基接触的直接隧穿效应。
2.
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型 。
3.
With the aggressive scaling down of MOS,the direct tunneling current will replace FN tunneling as the main issue effecting the MOS devices reliability.
对于栅厚为 3nm的超薄栅 MOS结构的界面用高斯粗糙面进行模拟来获取界面粗糙度对直接隧穿电流的影响 ,数值模拟的结果表明 :界面粗糙度对电子的直接隧穿有较大的影响 ,且直接隧穿电流随界面的粗糙度增加而增大 ,界面粗糙度对电子的直接隧穿的影响随着外加电压的增加而减小 。
6) tunneling current
隧穿电流
1.
The external condition could induce the change of piezoelectric field in superlattices and further induce the change of tunneling current.
外界条件可引起超晶格中内建电场的变化,进而引起隧穿电流的变化。
2.
Results show that with the increment of doping level, the peak tunneling current density increases for GaInP/GaAs tandem solar cells, and the performance of GaInP tunnel junctions are much better than GaAs tunnel junctions.
主要应用高掺杂的p n结理论进行隧道结的计算研究工作 ,针对GaInP/GaAs双结电池的结构 ,选择不同的宽禁带材料研究隧道结I V特性以及不同的掺杂浓度对于其I V特性的影响 ,寻找出掺杂浓度与隧穿电流的关系曲线。
3.
The gate direct tunneling current in ultra-thin oxide is computed with different device parameters.
采用自洽解方法求解一维薛定谔方程和二维泊松方程,得到电子的量子化能级和相应的浓度分布,利用MWKB方法计算电子隧穿几率,从而得到不同栅偏置下超薄栅介质MOSFET的直接隧穿电流模型。
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条