1.
Modeling of the Band-to-Band Tunneling Current in Polysilicon TFT's Leakage Region
多晶硅薄膜晶体管泄漏区带间隧穿电流的建模
2.
Research on Tunneling Current Noise Characterization and Measurement Methods in MOSFETs
MOSFET隧穿漏电流噪声特性及测试方法研究
3.
Tunneling process is important in the low to moderate current density range.
在中等及中等以下电流密度下，隧道穿透过程是重要的。
4.
The tunneling current is obstructed when the two ferromagnetic layers have opposite orientations and is allowed when their orientations are the same.
若两侧的铁磁层磁性方向相反，穿隧电流就被挡住，反之则可通过。
5.
Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode
GaMnN铁磁共振隧穿二极管自旋电流输运以及极化效应的影响
6.
Effect of polarization on current characteristics of AlN/GaN resonant tunneling diode
极化效应对AlN/GaN共振隧穿二极管电流特性的影响
7.
Study of Tunneling Magnetoresistance in Organic Spintronic
有机自旋电子学中的隧穿磁电阻研究
8.
The Electronic Tunneling and Spin Polarization in the Coupled Quantum Dots System
一维双量子点系统的电子隧穿及电导
9.
The Theoretical Research about the Tunneling Magnetoresistance in Double Spin Filter Tunnel Junctions;
双自旋过滤隧道结中的隧穿磁电阻的理论研究
10.
Study on Polarization and Tunneling Magnetoresistance about Double Tunnel Junctions
双隧道结中极化率和隧穿磁电阻的研究
11.
Tunnelling magnetoresistance effects of magnetic tunnel junctions
磁性隧道结的隧穿磁电阻效应及其研究进展
12.
Electric Charge Accumulation Effect in RTD:Lecture of Resonant Tunneling Devices(4)
共振隧穿二极管中的电荷积累效应——共振隧穿器件讲座(4)
13.
The quantum-mechanical nature of tunneling switches is suited for nanoscale circuits.
穿隧开关的量子特性很适合奈米电路。
14.
Characteristics of Electron Tunneling Based on Two-Coupled Quantum Dot System
耦合双量子点中基态电子的隧穿特性
15.
Tunneling of Electrons Through Parabolic Quantum Well Structures with Double Barriers;
双势垒抛物量子阱结构中的电子隧穿
16.
General Radiation via Tunneling in a Charged BTZ Black Hole
带电BTZ黑洞一般性辐射的隧穿效应
17.
Modeling and simulation of single-electron devices by asymmetric tunneling capacitance
非对称性隧穿电容单电子器件模型与模拟
18.
Displacement analysis of tunnels crossing river and bridge foundations
城市区间隧道穿越河流及桥基的位移分析