1) tunnelling electrons
隧穿电子
3) single electron tunneling
单电子隧穿
1.
The apparent Coulomb blockade and single electron tunneling are observed in the current voltages characteristics of the SETs at 77K.
提供了一种制备量子线和量子点的工艺方法 ,在器件的电流、电压特性上可观测到明显的库仑阻塞效应和单电子隧穿效应。
2.
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象,系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
3.
Coulomb blockade and single electron tunneling are observed in the SETs.
本文介绍了几种用电子束光刻、反应离子刻蚀方法制备硅量子线、量子点和用电子束光刻、电子束蒸发以及剥离技术制备纳米金属栅的工艺方法 ;用这种工艺方法在P型SIMOX硅片上成功制造的一种单电子晶体管 ,在其电流电压 特性上观测到明显的库仑阻塞效应和单电子隧穿效
4) hot electron tunneling
热电子隧穿
1.
It is found that the barrier width is thinned by the surface defects with high density to enhance the hot electron tunneling.
发现表面高密度缺陷减薄了势垒层厚度,显著增强了热电子隧穿过程。
2.
Two electron transition processes between channel and surface states in GaN HFET:hot electron tunneling and surface to band edge transition are investigated.
研究了GaNHFET中沟道热电子隧穿到表面态及表面态电子跃迁到表面导带两种跃迁过程及其激活能。
5) inelastic electron tunnelling
电子非弹性隧穿
6) Electron tunneling constailt
电子隧穿系数
补充资料：隧穿效应
分子式：
CAS号：
性质：见隧道效应。
CAS号：
性质：见隧道效应。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条