1) 300mm nitrogen-doped Czochralski silicon wafer
300mm掺N直拉Si片
1.
Flourier transformation infrared spectroscopy and scanning infrared microscopy are used to measure the amount of precipitated oxygen and the oxygen precipitate density in a 300mm nitrogen-doped Czochralski silicon wafer,respectively.
通过这样的方法,定性地研究了300mm掺N直拉Si片的原生氧沉淀的径向分布。
3) heavily arsenic-doped CZ silicon
重掺砷直拉硅片
1.
Through the comparative investigation on oxygen precipitation behaviors in the heavily and lightly arsenic-doped n-type Czochralski(CZ) silicon wafers subjected to the two-step annealing successively at low temperature(450—800℃) and high temperature(1000℃),the effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped CZ silicon wafer have been elucidated.
通过对比研究重掺砷直拉硅片和轻掺n型直拉硅片经过低温(450—800℃)和高温(1000℃)两步退火的氧沉淀行为,阐明了低温退火对重掺掺砷直拉硅片的氧沉淀形核的作用。
4) 300 mm silicon wafer
300mm硅片
1.
The subsurface damage depth measurement of double side grinding of 300 mm silicon wafer can not only give a correct basis for process improvement and reduce the subsurface damage depth of double side grinding,but also help reduce polishing time to improve geometry parameter of polished wafer.
本文应用恒定腐蚀法和双晶衍射法测量了300mm硅片双面磨削工艺后的损伤层厚度,对恒定腐蚀法进行了较深入的研究,并结合恒定腐蚀法的结果对硅片进行双晶衍射。
2.
A motion model based on the analysis of mathematical modeling was established to study motion path in double-sided polishing process for 300 mm silicon wafers.
优化四个转速,可以显著改善300mm硅片表面的平整度和局部平整度。
5) 300mm CZ silicon wafer
300mm CZ硅片
6) 300 mm wafer
300mm圆片
补充资料：φ300mm-L1000mm真空自耗炉(北京钢铁研究总院)
φ300mm-L1000mm真空自耗炉(北京钢铁研究总院)
。00mm_LIO00mm真空自耗炉(;匕京钢铁研究总院)哪
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
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