1.
300 mm Si Wafer Manufacture and New Development
300mm Si片加工及最新发展
2.
Study on Removal Mechanism of Ductile-Mode Grinding in 300mm Silicon Wafer Surface Grinding Process
300mm硅片表面延性磨削机理研究
3.
Investigation of Thermally Induced Microdefects in 300 mm Heavily Boron Doped Si Substrates Used for Epitaxy
外延用300mm重掺B Si衬底中热致微缺陷研究
4.
Analysis of Forming Reasons for Corner Cracks on Continuously Cast Heavy Slabs of 300 mm Thickness at Ansteel
鞍钢300mm厚板坯连铸角裂产生原因分析
5.
Most of the casein in milk is in the form of casein micelles, aggregates of several thousand casein molecules with a diameter of 10～300 nm.
数千万个酪蛋白分子的聚合体直径为10-300mm
6.
Pseudo-static Experimental Research on RC Fully 300mm-Staggered Joint and Nonlinear Finite Element Analysis;
钢筋混凝土框架完全错开300mm节点拟静力试验与非线性有限元分析
7.
Effects of Nitrogen on Oxidation-Induced Stacking Faults in 300 mm CZ Silicon
300mm直拉单晶硅中的氮元素对氧化诱生层错的影响
8.
Diode Infrared Detectors Based on SOI Si Wafers
基于SOI Si片的二极管红外探测器
9.
Study on the "Haze" Problem of Stored Silicon Wafer
Si抛光片存储中表面起“雾”的研究
10.
300mm Lithography and Bonding Technologies for TSV Applications in Image Sensor and Memory Products
在图像传感器和存储产品中应用硅通孔工艺的300mm光刻与键合技术(英文)
11.
Growth Behavior of ZnO Film Deposited on Si Substrate by Reactive Magnetron Sputtering;
反应磁控溅射ZnO薄膜在Si基片上的生长行为
12.
Study on SiGe/Si Epitaxy and SiGe HBT Microwave Monolithic Integrated Circuit;
SiGe/Si外延与SiGe HBT微波单片放大电路研究
13.
Epitaxial Growth of Bi_2Sr_2CaCu_2O_x/YSZ Films on Si Wafer by Pulse Laser Deposition;
Si基片上脉冲激光外延生长Bi_2Sr_2CaCu_2O_x/YSZ复合薄膜
14.
Researches on Electrical and Mechanical Characteristics of Low Temperature InP/Si Wafer Bonding;
InP/Si低温晶片键合的电特性和力学特性的研究
15.
Study of Luminous Efficiency of Blue GaN-LED Chip on Si Substrate;
Si衬底GaN基蓝光LED芯片出光效率的研究
16.
Theory Analysis and Experiment Research of Low Temperature Si/InP Wafer Bonding Technology;
Si/InP晶片低温键合技术的理论分析和实验研究
17.
Effect of Grain Size of Grinding Wheel on Surface Topography
砂轮粒径对磨削后Si片表面形貌的影响
18.
Surface Modification of Cutting Tools With Ti-Si-N Coatings
刀片表面Ti-Si-N涂层的制备及应用研究