1) Ge_xSi_(1-x)/Si Single Quantum Well
Ge_xSi_(1-x)/Si量子阱
2) Ge_xSi_(1-x)/Si Heterojunction
Ge_xSi_(1-x)/Si异质结
4) SiGe/Si quantum well
SiGe/Si量子阱
1.
The mechanism of the near-band-gap optical transition in doped SiGe/Si quantum well is investigated, and the model of the near-band-gap optical transition originated from the statistical distribution of the impurities is suggested.
本文研究了SiGe/Si量子阱中近带边光跃迁的产生机制,对由杂质无规分布引起的近带边光跃迁给出了一个物理模型。
5) Al_xGa_ 1-x N/GaN DQWs
Al_xGa_(1-x)N/GaN双量子阱
6) Cd x Zn 1-x Te/ZnTe MQW
Cd_xZn_(1-x)Te/ZnTe多量子阱
补充资料：单量子阱(见量子阱)
单量子阱(见量子阱)
single quantum well
单且子阱sillgle quantum well见量子阱。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条