1) 4 inch diameter germanium monocrystal
4英寸锗单晶
2) germanium monocrystalline
锗单晶体
3) SiGe bulk
硅锗单晶
1.
The distribution of impurity Ge in SiGe bulk single crystal which was grown by varying speed CZ was measured by using the SEM-EDS methods, and it was found that the Ge concentration varied from a lower value at head to a highter one at the tail of Si crystal which was doped Ge.
利用扫描电镜能谱分析法,对 CZ 法生长的掺锗浓度不同的硅锗单晶中锗浓度进行了测定,结果发现硅中锗的纵向分布是头部浓度较低,尾部锗浓度较高。
4) single crystal of germanium
锗单晶<冶>
5) single crystal germanium
单晶锗
补充资料：8英寸硅单晶
8英寸硅单晶
8英寸硅单晶
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条