1) ultra-thin gate oxide
超薄栅氧化层
1.
The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress;
电压应力下超薄栅氧化层n-MOSFET的击穿特性
2.
Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown;
超薄栅氧化层n-MOSFET软击穿后的导电机制
3.
The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics;
动态应力下超薄栅氧化层经时击穿的可靠性评价
2) ultra thin gate oxide
超薄栅氧化层
1.
The breakdown protection characteristics of fluorination and nitrification implanted ultra thin gate oxide are investigated.
对注 F、注 N以及先注 N后注 F超薄栅氧化层的击穿特性进行了实验研究 ,实验结果表明 ,在栅介质中引入适量的 F或 N都可以明显地提高栅介质的抗击穿能力 。
2.
The breakdown characteristics of N 2O nitride ultra thin gate oxide are investigated.
研究了含 N超薄栅氧化层的击穿特性 。
3) Thin gate oxide
薄栅氧化层
1.
Research on TDDB of thin gate oxide;
薄栅氧化层的TDDB研究
2.
FN tunneling and hot hole (HH) stress induced leakage current (SILC) transient characteristics in thin gate oxide are investigated.
分别研究了FN隧穿应力和热空穴 (HH)应力导致的薄栅氧化层漏电流瞬态特性 。
3.
High electric field annealing effect in thin gate oxide of MOS structure is studied in depth, and the detrapping mechanisms of trapped charge in the gate oxide are investigated.
深入研究了MOS结构中薄栅氧化层在高电场下的退火效应 ,对氧化层陷阱电荷的退陷阱机理进行了深入探讨 。
4) thin gate oxides
薄栅氧化层
1.
A substrate hot holes injection method is used to quantitatively examine the roles of electrons and holes separately in thin gate oxides breakdown.
利用衬底热空穴 (SHH)注入技术 ,分别定量研究了热电子和空穴注入对薄栅氧化层击穿的影响 ,讨论了不同应力条件下的阈值电压变化 。
2.
Charge to breakdown of the thin gate oxides was tested and investigated by controlling the amounts of injected hot electrons and holes separately with substrate hot holes injection method.
利用衬底热空穴注入技术分别控制注入到薄栅氧化层中的热电子和空穴量 ,对相关击穿电荷进行了测试和研究 。
5) ultra-thin gate oxides
超薄栅氧化物
6) ultrathin oxide layer
超薄氧化层
补充资料：薄层棒色谱法
分子式：
CAS号：
性质：又称棒色谱(rod chromatography)。在石英棒或石英管外壁上涂布一薄层物质作为固定相的薄层色谱法。
CAS号：
性质：又称棒色谱(rod chromatography)。在石英棒或石英管外壁上涂布一薄层物质作为固定相的薄层色谱法。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条