1) Ultrathin Gate Oxide
超薄氧化门
2) ultra thin oxidation
超薄氧化膜
1.
The ultra thin oxidation sample(1～1.
获取低浓度HF酸刻蚀速度基础上制备出超薄氧化膜(1~1。
3) ultrathin oxide layer
超薄氧化层
4) ultra-thin gate oxide
超薄栅氧化层
1.
The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress;
电压应力下超薄栅氧化层n-MOSFET的击穿特性
2.
Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown;
超薄栅氧化层n-MOSFET软击穿后的导电机制
3.
The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics;
动态应力下超薄栅氧化层经时击穿的可靠性评价
5) ultrathin SiO 2 films
二氧化硅超薄膜
1.
Surface morphology and local electronic properties of ultrathin SiO 2 films grown by in situ thermal oxidation on Si(111) substrates in ultrahigh vacuum have been investigated by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) at room temperature.
用超高真空热氧化方法在Si(1 1 1 )清洁衬底上生长了二氧化硅超薄膜 ,并利用超高真空扫描隧道显微镜和扫描隧道谱技术对超薄膜的表面形貌和局域电学特性进行了研究。
6) ultra thin gate oxide
超薄栅氧化层
1.
The breakdown protection characteristics of fluorination and nitrification implanted ultra thin gate oxide are investigated.
对注 F、注 N以及先注 N后注 F超薄栅氧化层的击穿特性进行了实验研究 ,实验结果表明 ,在栅介质中引入适量的 F或 N都可以明显地提高栅介质的抗击穿能力 。
2.
The breakdown characteristics of N 2O nitride ultra thin gate oxide are investigated.
研究了含 N超薄栅氧化层的击穿特性 。
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