1.
Study on Thermal Stability and Tunneling Current of Ultrathin Gate Oxidation;
超薄栅氧化层的热稳定性和隧道电流研究
2.
Process Monitor of Plasma Charging Damage in Ultra-Thin Gate Oxide
超薄栅氧化层等离子体损伤的工艺监测
3.
Study on the Time Dependent Dielectric Breakdown and Reliability Simulation of Ultra-thin Gate Oxides;
超薄栅氧化层经时击穿效应与可靠性仿真技术研究
4.
gate oxide integrity
栅极氧化层的完整性
5.
Novel Structure Trench E-JFET with Adding Oxide Region beneath Gate
栅极下加氧化层的新型沟槽栅E-JFET仿真研究
6.
At the sub 90nm technology node, the gate oxide thickness is expected to be 12-15 Angstrom.
当半导体结点技术发展到小于90纳米时,栅氧化层厚度将减薄至12到15埃。
7.
double poly process
双层多晶硅栅金属氧化物半导体工艺
8.
avalanche injection stacked gate mos
雪崩注入多层栅金属氧化物半导体
9.
Study of the Reliability of the Gate Oxide Related to EEPROM
EEPROM中栅氧化层的可靠性研究
10.
Temperature Response of Long-period gratings coated with LC ultra-thin film
基于液晶超薄涂覆层的长周期光纤光栅温度特性的研究
11.
Studies on super-hydrophilic of silicon-doped titanium dioxide composite film
掺硅二氧化钛复合薄膜超亲水性研究
12.
Study on Plasma Process Induced Damage in Gate Oxide of MOSFET;
等离子体工艺引起的MOSFET栅氧化层损伤研究
13.
Influence of Aluminum Oxide Buffer Layer on the Properties of ZnO Thin Film
氧化铝缓冲层对ZnO薄膜性质的影响
14.
Deployment optimization of SAGD pilot design in thin bed and extra-heavy oil reservoir of Block D229
D229块薄层超稠油SAGD试验优化部署设计
15.
Solution-Processed Zinc Oxide Thin Films and Top-Gate Thin Film Transistors
溶液法制备氧化锌半导体薄膜及其顶栅极晶体管器件
16.
Preparation of Thin SiO_2 Films from Polysilane Coatings Using Oxygen Plasma Method;
氧等离子体处理聚硅烷涂层制备二氧化硅薄膜
17.
They should remove the field plate and oxide and deposit a thin aluminum film over this region.
他们应当去掉场极板和氧化层，并在整个区域淀积一层薄的铝薄膜。
18.
Preparation of Super-hydrophobic ZnO Films by Chemical Solution Deposition Method
化学溶液沉积法制备超疏水氧化锌薄膜