1) thin crystalline silicon
薄晶体硅
1.
Back electrode paste of industrialized thin crystalline silicon solar cell;
工业化薄晶体硅太阳电池背电极浆料
2) thin piece of crystal silicon
硅晶体薄片
3) poly-Si TFT
多晶硅薄膜晶体管
1.
Based on metal induced unilateral crystallization (MIUC) technology,poly-Si thin film transistor (poly-Si TFT) display scan driving circuit and data driving circuit for AM-LCD and AM-OLED were developed,which can be made with the fabrication processes compactable with poly-Si TFT active matrix.
以高性能的金属诱导单一方向横向晶化多晶硅薄膜晶体管(MIUCpoly-SiTFT)为基础,研制出性能能满足AM-LCD和AM-OLED要求、版图和象素尺寸适配、制备工艺和象素电路兼容的多晶硅TFT行扫描和列驱动电路。
4) polysilicon Thin-Film Transistors
多晶硅薄膜晶体管
1.
An explicit solution to the polysilicon Thin-Film Transistors(poly-Si TFTs) implicit surface potential equation has been derived.
显式地推导多晶硅薄膜晶体管(Polysilicon thin-film transistors,poly-SiTFT)表面势隐含方程的近似解,该求解法非迭代的计算大大地提高了计算效率,且精确度非常高,与数值迭代结果比较,绝对误差范围只在纳伏数量级。
2.
A new physical surface-potential-based current model of polysilicon thin-film transistors (poly-Si TFTs) using charge sheet approach suitable for circuit simulation is presented.
本文利用薄层电荷理论,建立了一个基于表面势的、物理的多晶硅薄膜晶体管(Polysilicon Thin-Film Transistors ,poly-Si TFTs)的电流模型,且该模型适用于电路仿真。
5) p-Si TFT
多晶硅薄膜晶体管
1.
Leakage current is a main problem for the application of polycrystalline silicon transistor(p-Si TFT),the modeling of leakage current in p-Si TFT is important for designers.
泄漏电流是多晶硅薄膜晶体管应用的一个主要问题,多晶硅薄膜晶体管泄漏电流的建模对集成多晶硅薄膜晶体管设计和工艺改进具有重要意义。
2.
The band-to-band tunneling effect in P-Si TFTs and its generation mechanism are introduced.
介绍了多晶硅薄膜晶体管(P-SiTFTs)中的带间隧穿(BBT)效应的产生机理,分析了BBT对P-SiTFT电流特性的影响,总结了关于P-SiTFT带间隧穿效应的研究现状,并提出建立更为完善的BBT电流模型的建模思路。
3.
The etching-ratio of several films such as Ta,p-Si often used in p-Si TFT was provided and the selectivity-ratio of different films can be selected from 2 to 20 by optimizing the technologic parameter.
对多晶硅薄膜晶体管器件工艺中的反应性离子刻蚀技术进行研究 ,给出了Ta、p Si等多晶硅薄膜晶体管器件中常见薄膜的刻蚀速率 ,通过工艺参数的优化 ,使薄膜间的选择比在 2～ 2 0可选择 ;并通过气体掺杂 ,实现了SiNx 对 p Si的选择比从 - 1到 2的反
6) microcrystalline silicon thin film transistor
微晶硅薄膜晶体管
1.
Investigation on stability of microcrystalline silicon thin film transistors;
微晶硅薄膜晶体管稳定性研究
补充资料：二磷化硅镉晶体
分子式： CdSiP2
CAS号：
性质：周期表第Ⅱ,IV,V族元素化合物半导体。共价键结合,有一定离子键成分,正方晶系黄铜矿结构。为复式晶格,直接带隙半导体。室温禁带宽度2.40eV。电子迁移率1.5×10-2m2/(V·s)。熔点1120℃。采用化学气相沉积法、锡溶液生长法等制备。
CAS号：
性质：周期表第Ⅱ,IV,V族元素化合物半导体。共价键结合,有一定离子键成分,正方晶系黄铜矿结构。为复式晶格,直接带隙半导体。室温禁带宽度2.40eV。电子迁移率1.5×10-2m2/(V·s)。熔点1120℃。采用化学气相沉积法、锡溶液生长法等制备。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条