1) poly_Si films
多晶硅薄摸
2) polycrystalline silicon film
多晶硅薄膜
1.
Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films;
氢稀释对多晶硅薄膜结构特性和光学特性的影响
2.
Control of grain size during low-temperature growth of polycrystalline silicon films;
多晶硅薄膜低温生长中晶粒大小的控制
3.
The origin structure of a-Si∶H films is closely related to the recrystallizaiton temperature,the grain size and electrical properties of polycrystalline silicon films,which were formed by recrystallization annealing of a-Si∶H films.
用a -Si∶H薄膜经退火晶化成的多晶硅薄膜 ,其晶化温度、晶粒尺寸和电性能与薄膜的初始结构有密切关系 ,而a -Si∶H薄膜的初始结构依赖于沉积条件。
3) polysilicon thin films
多晶硅薄膜
1.
A novel method for electrically measuring the thermal expansion coefficient of polysilicon thin films is presented.
提出了一种新型多晶硅薄膜热膨胀系数的电测试结构,给出了热机电耦合模型和测试方法,并利用Coventor软件和ANSYS软件进行模拟和验证。
2.
A test structure to measure the diffusivity of polysilicon thin films is proposed.
本文提出了一种表面加工多晶硅薄膜的在线测试结构。
3.
An on-line test structure for measuring the thermal conductivity of polysilicon thin films is proposed.
提出了一种在线测试表面加工多晶硅薄膜热导率的结构 ,推导了热学模型 ,给出了测试方法 ,用 ANSYS验证了热学模型 。
4) polycrystalline silicon thin film
多晶硅薄膜
1.
Study on low temperature electrical properties of polycrystalline silicon thin films deposited at low temperatures using SiCl_4/H_2;
SiCl_4/H_2为气源低温沉积多晶硅薄膜低温电学特性的研究
2.
Study of preparing polycrystalline silicon thin film by RTA
快速热退火制备多晶硅薄膜的研究
3.
Effects of thickness and grain size on Voc,Jsc,and ( of n +/p and n +/p p + polycrystalline silicon thin film solar cells have been calculated by PC1D.
利用PC1D计算了结构为n+ / p和n+ / p p+ 多晶硅薄膜太阳电池的晶粒尺寸和薄膜厚度对其Voc,Jsc和 η的影响。
5) poly-Si thin films
多晶硅薄膜
1.
This article introduced the method of fabricating poly-Si thin films by aluminum-induced crystallization(AIC)of amorphous silicon, and described the general process of fabricating poly-Si thin films.
多晶硅薄膜在微电子和能源科学领域有着广泛的应用。
2.
Under the help of SEM measurement,the morphologies of the Poly-Si thin films were analyzed basing on the growing theory of poly-Si thin films,The result shows that columnar grains could be formed in thick films,and the thicker the films are,the larger the columnar grains grow.
在多晶硅薄膜(Poly-S i)生长理论的基础上,用等离子体化学气相沉积(RF-PECVD)系统,配合快速光热退火装置(RTP),在玻璃衬底和石英衬底上制备了柱状结构的多晶硅薄膜。
3.
In this thesis, the fabrication of high quality poly-Si thin films is investigated.
随着第三代太阳能电池——薄膜太阳能电池的深入研究,要提高多晶硅薄膜太阳能电池的光伏转换效率,制备高质量的多晶硅薄膜是从本质上解决问题的一个途径。
6) polycrystalline silicon films
多晶硅薄膜
1.
The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl_4/H_2 mixture;
用SiCl_4/H_2气源沉积多晶硅薄膜光照稳定性的研究
2.
High quality polycrystalline silicon films were directly fabricated from SiCl 4_H 2 mixture gases by plasma chemical vapor deposition technique with deposition rate and crystalline fraction of 3.
以SiCl4 和H2 为气源 ,用等离子体增强化学气相沉积技术 ,以 3 5 s的速率生长出了晶化度为 75 %的优质多晶硅薄膜 。
3.
High-quality polycrystalline silicon films composed of large and uniform columnar grains with a moderate lateral grain size of ～1μm,vertical grain size of ～ 20μm and crystalline fraction(fc) over 95 % have been fabricated on glass substrates with metal Cu-induced layer by hot-wire chemical vapor deposition(HWCVD).
采用热丝化学气相沉积法(HWCVD),在金属铜诱导层上成功制备出横向晶粒尺寸在1μm左右、垂直晶粒尺寸达20μm的柱状多晶硅薄膜,其晶化率在95%以上。
补充资料：多晶硅
单质硅的一种形态。熔融的单质硅凝固时，硅原子以金刚石晶格排列成许多晶核，如这些晶核长成晶面取向不同的晶粒，则这些晶粒结合起来,结晶成多晶硅(见彩图)。多晶硅与单晶硅的差异主要表现在物理性质方面。例如，在力学性质、光学性质和热学性质的各向异性方面,远不如单晶硅明显；在电学性质方面,多晶硅晶体的导电性也远不如单晶硅显著，甚至于几乎没有导电性。在化学活性方面，两者的差异极小。多晶硅和单晶硅可从外观上加以区别，但真正的鉴别须通过分析测定晶体的晶面方向、导电类型和电阻率等。
由熔融的单质硅在过冷条件下自由结晶，可得多晶硅晶体。多晶硅可作拉制单晶硅的原料。
由熔融的单质硅在过冷条件下自由结晶，可得多晶硅晶体。多晶硅可作拉制单晶硅的原料。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条