1) X-ray lithography
X光光刻
1.
A new micro fabrication method for sub-wavelength gratings was presented,that is,sub-wavelength line and space pattern were obtained with X-ray lithography and then bulk gratings with high aspect ratio were formed with development.
描述了一种新的亚波长光栅的微细加工技术,即X光光刻得到相应的亚微米级的线宽图形,再利用显影技术获得了高深宽比的立体亚波长光栅。
2.
A novel sub-wavelength anti-reflection gratings fabrication method — X-ray lithography to obtain sub-wavelength anti-reflection patterns of high aspect ratio bulk structures was developed.
首先用X光光刻在PMMA光刻胶上得到相应的亚微米级的线宽图形,再利用显影技术获得了高深宽比的立体亚波长纳米结构,即抗反射结构。
2) X-ray lithography
X射线光刻
1.
Synchrotron radiation X-ray lithography beamline design for 50nm resolution and below;
50nm及50nm以下同步辐射X射线光刻光束线设计
2.
Key technology of mask making for 50 nm X-ray lithography;
50 nm X射线光刻掩模制备关键技术
3.
Deep-submicron T-shaped gate fabrication technology using syn chrotron radiation x-ray lithography;
同步辐射x射线光刻制作深亚微米T形栅
3) XRL
X射线光刻
1.
In order to get the dark field high aspect ratio and the batch product of the MZP,we replicate the MZP mask by using synchrotron radiation X-ray lithography(XRL).
在硅为衬底材料的自支撑氮化硅薄膜上,采用阴阳图形互换转移技术,先使用电子束直写方法制作成功了最外环为150nm的阳图形微波带片,然后用同步辐射X射线光刻技术复制成功了最外环为150nm的阴图形微波带片,得到可以应用于ICF诊断技术中的微波带片。
2.
As semiconductor device geometry shrinks down to the 100nm order for the most critical layers through Synchrotron X-ray Lithography (XRL), requirements for overlay accuracy alignment increasingly strict in the X-ray Lithography process.
作为微细加工技术之一的高分辨率光刻技术--同步辐射X射线光刻(XRL)可应用于100nm及100nm节点以下分辨率光刻,高精度对准技术对XRL至关重要,直接影响到后续器件的生产质量。
4) X ray lithography
X射线光刻
5) X-ray deep lithography
X光深层光刻
6) X-ray lithography .mask
X射线光刻掩模
补充资料：表光合强度(见光合强度)
表光合强度(见光合强度)
forecast of sowing or transplanting time
b iaoguanghe qiangdu表光合强度见光合强度
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条