Study of injection and relaxation of electron spins in InGaN film by time-resolved absorption spectroscopy;

Theoretical Calculation of Conversion Efficiency of InGaN Solar Cells;

Research of Radiation Properties for InGaN Solar Cell Materials;

Investigation on Optical Properties of Different Width InGaN/GaN Quantum Well;

High-resolution X-ray diffraction studies on the indium content and layer thicknesses in InGaN/GaN multiquantum wells;

Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE;

P-GaN bulk material and p-InGaN/GaN superlattice used as p-contact layer are grown by low pressure metal organic chemical vapor deposition(LP-MOCVD),and their specific contact resistivity(SCR)is measured by circular transmission line model(CTLM).

Thin film GaN-based membranes by laser lift-off and cleaved InGaN LD facet;