1) halfly silicon carbide
半SiC
2) semi-insulating SiC
半绝缘SiC
1.
These will be very helpful for the design of semi-insulating SiC materials.
这对于半绝缘SiC材料设计将非常有帮助。
4) high-quality semi-insulating 4H-SiC
高纯半绝缘4H-SiC
1.
ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVD
LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性
5) silicon carbide
SiC
1.
Status of Studies on the Oxidation of Silicon Carbide;
SiC材料氧化行为研究进展
2.
Large-scale silicon carbide nanowires were prepared by using pure silicon powder and phenolic resin,which were mixed,molded,carbonizated,and then subjected to the microwave heating with a rate of 10℃/min between 1300℃and 1400℃in the static argon atmosphere for 0.
5～2h的微波加热条件下制备了SiC纳米线。
3.
The properties and microwave absorbing performance for high temperature of silicon carbide are reviewed,and the improvements on its electrical properties by doping are discussed.
综述了SiC的性质和作为高温吸收剂的吸波性能,并对掺杂可引起其电学性能的改善作了一定的阐述。
6) 4H-SiC MESFET
4H-SiC金属外延半导体场效应晶体管
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