1.
ESR characteristics of high-quality semi-insulating 4H-SiC crystal prepared by LPCVD
LPCVD法制备的高纯半绝缘4H-SiC晶体ESR谱特性
2.
The Formation and Characteristics of Semi-insulating SiC with the Doping of Vanadium;
钒掺杂半绝缘SiC的制备及特性研究
3.
Investigation of TiC Ohmic Contacts to N-type 4H-SiC Semiconductor;
TiC/n型4H-SiC半导体欧姆接触研究
4.
Pure insulating pulp
GB/T13505-1992高纯度绝缘木浆
5.
Electrical Characterization Measurement of Semi-insulating SiC Single Crystal;
半绝缘SiC单晶电学参数的测量技术研究
6.
Electrical Characterization Measurement of Semi-insulating SiC Single Crystal
半绝缘SiC单晶材料的电学参数测试研究
7.
The Study of High Frequency Small Signal Characteristics for 4H-SiC Buried-Channel MOSFET;
4H-SiC埋沟MOSFET的高频小信号特性研究
8.
Study of High Frequency 4H-SiC Bipolar Junction Transistor
高频4H-SiC双极晶体管的研制
9.
Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology
采用场板和边缘终端技术的大电流Ni/4H-SiC SBDs
10.
The Fabrication of Au/4H-SiC Semitransparent Schottky UV Photodiode;
Au/4H-SiC半透明肖特基UV光电二极管的研制
11.
Simulation Study of 4H-SiC Metal-Semiconductor Bipolar Junction Transistors
4H-SiC金属—半导体双极晶体管的模拟研究
12.
A Study on Nonlinear Models for 4H-SiC MESFET;
4H-SiC MESFET非线性模型研究
13.
Study of Annealing of 4H-SiC SBD and JBS
4H-SiC SBD和JBS退火研究
14.
"At absolute zero, a pure semiconductor has all of its electrons tightly bound and acts as an insulator."
在绝对零度时,纯半导体所有电子都紧紧结合在一起,因而显示出绝缘体的性质。
15.
metal insulater-semiconductor
金属—绝缘体—半导体
16.
The Theoretical and Experimental Study for 4H-SiC MESFET;
4H-SiC MESFET理论模型与实验研究
17.
Study on Defects of SiO_2/4H-SiC(0001) Interface by XPS;
SiO_2/4H-SiC（0001）界面缺陷的XPS研究
18.
The Study on 4H-SiC MOS Process and Electrical Properties;
4H-SiC MOS结构工艺与电学特性研究