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1)  SiC-C/SiC
SiCC/SiC
1.
Depth profile of the boron ions in the boron-implanted SiC-C/SiC composites was checked by Auger electronic energy spectrum.
通过等离子体源离子注入法(PSII),对带有SiC涂层的C纤维增强SiC基(SiCC/SiC)复合材料进行硼离子注入,研究了硼离子注入对样品抗氧化性能的影响。
2)  silicon carbide
SiC
1.
Status of Studies on the Oxidation of Silicon Carbide;
SiC材料氧化行为研究进展
2.
Large-scale silicon carbide nanowires were prepared by using pure silicon powder and phenolic resin,which were mixed,molded,carbonizated,and then subjected to the microwave heating with a rate of 10℃/min between 1300℃and 1400℃in the static argon atmosphere for 0.
5~2h的微波加热条件下制备了SiC纳米线。
3.
The properties and microwave absorbing performance for high temperature of silicon carbide are reviewed,and the improvements on its electrical properties by doping are discussed.
综述了SiC的性质和作为高温吸收剂的吸波性能,并对掺杂可引起其电学性能的改善作了一定的阐述。
3)  3D C/SiC
3DC/SiC
1.
It is found in the 3D C/SiC continuous fiber-reinforced ceramic composites (CFCC) that three kinds of interactions, i.
采用透射电子显微技术从微结构的角度研究了3DC/SiC内界面区与裂纹的相互作用行为。
4)  SiC /Ti6Al4V
SiC/Ti6Al4V
1.
The Formation Sequence of Interfacial Reaction Products and Diffusion Path in SiC /Ti6Al4V Composite;
SiC/Ti6Al4V复合材料界面反应产物的形成序列及扩散路径(英文)
5)  n-Sic
n–SiC
6)  2D Cf/SiC
2DCf/SiC
1.
2D Cf/SiC composites were prepared by precursor infiltration and pyrolysis(PIP).
以先驱体浸渍裂解(PIP)工艺制备了2DCf/SiC复合材料,研究了低温裂解工艺(裂解温度低于1000℃)对2DCf/SiC复合材料结构和性能的影响,为Cf/SiC复合材料的低温制备探索可行之路。
补充资料:bioactive glass-ceramic composite reinforced by SiC whisker
分子式:
CAS号:

性质:由碳化硅晶须与生物活性玻璃陶瓷复合而成的生物陶瓷复合材料。高强度、高弹性模量、无毒的碳化硅晶须在陶瓷基材中弥散分布,使材料中的裂纹相对均匀,裂纹扩展发生转向和分支;外力作用下碳化硅晶须拔出时产生的拔出效应,使复合陶瓷的弯曲强度达460MPa,断裂韧性达4.3MPa·m1/2,维伯尔系数高达24.7,标志着它是可承力的生物陶瓷复合材料。

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