1) 2D Cf/SiC
2DCf/SiC
1.
2D Cf/SiC composites were prepared by precursor infiltration and pyrolysis(PIP).
以先驱体浸渍裂解(PIP)工艺制备了2DCf/SiC复合材料,研究了低温裂解工艺(裂解温度低于1000℃)对2DCf/SiC复合材料结构和性能的影响,为Cf/SiC复合材料的低温制备探索可行之路。
2) 2D C_f/SiC-Cu composites
2DCf/SiC-Cu材料
3) silicon carbide
SiC
1.
Status of Studies on the Oxidation of Silicon Carbide;
SiC材料氧化行为研究进展
2.
Large-scale silicon carbide nanowires were prepared by using pure silicon powder and phenolic resin,which were mixed,molded,carbonizated,and then subjected to the microwave heating with a rate of 10℃/min between 1300℃and 1400℃in the static argon atmosphere for 0.
5～2h的微波加热条件下制备了SiC纳米线。
3.
The properties and microwave absorbing performance for high temperature of silicon carbide are reviewed,and the improvements on its electrical properties by doping are discussed.
综述了SiC的性质和作为高温吸收剂的吸波性能,并对掺杂可引起其电学性能的改善作了一定的阐述。
4) 2D Cf/Si-O-C composites
2DCf/Si-O-C材料
1.
The effects of SiC powder(SiCp) content on the mechanical properties and oxidation resistance of 2D Cf/Si-O-C composites were investigated.
以二维碳纤维布、硅树脂先驱体、SiC微粉和乙醇溶剂为原料,采用PIP工艺制备了2DCf/Si-O-C材料,考察了浆料配比对材料力学性能和抗氧化性能的影响。
5) 3D C/SiC
3DC/SiC
1.
It is found in the 3D C/SiC continuous fiber-reinforced ceramic composites (CFCC) that three kinds of interactions, i.
采用透射电子显微技术从微结构的角度研究了3DC/SiC内界面区与裂纹的相互作用行为。
6) SiC /Ti6Al4V
SiC/Ti6Al4V
1.
The Formation Sequence of Interfacial Reaction Products and Diffusion Path in SiC /Ti6Al4V Composite;
SiC/Ti6Al4V复合材料界面反应产物的形成序列及扩散路径(英文)
补充资料：Dcf格式
是数码照相机的统一记录格式。是为了方便相关装置间使用画像文件而制定的日本电子工业振兴协会 (jeida)规格中的 design rule of camera file system的简称。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条