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1)  piezoelectric screw dislocation
压电螺型位错
1.
The electroelastic interaction between a piezoelectric screw dislocation and collinear interfacial rigid lines is studied.
研究了压电材料中压电螺型位错和共线界面导电刚性线夹杂的电弹干涉效应。
2.
The electroelastic interaction between a piezoelectric screw dislocation and a circular coated inclusion with interfacial cracks is investigated.
研究位于基体或夹杂中任意点的压电螺型位错与含界面裂纹圆形涂层夹杂的电弹耦合干涉问题。
2)  screw dislocation
螺型位错
1.
The elasticity field for screw dislocation in cubic quasi-crystal;
立方准晶中螺型位错的弹性场
2.
This paper studied the interaction of a generalized screw dislocation with interfacial conducting rigid line inclusions by using analysis continuation principle of functions of complex variable,and the general solution of the problem was presented.
采用复变函数解析延拓原理,研究了电磁材料中压电磁螺型位错和共线界面刚性线的磁电弹耦合干涉效应并得到该问题的一般解答。
3.
The electroelastic interaction of a screw dislocation inside a circular inclusion with interfacial cracks in piezoelectric composite materials under anti_plane shear and in_plane electric loads at infinity is investigated.
研究了无穷远纵向剪切和面内电场共同作用下,压电复合材料圆形夹杂中螺型位错与界面裂纹的电弹耦合干涉作用。
3)  moving screw dislocation
运动螺型位错
1.
On the interaction between a moving screw dislocation and a cylindrical rigid inclusion in piezoelectromagnetic solid;
压电磁材料中运动螺型位错与圆柱形刚性夹杂的干涉作用
2.
The problem for the interaction between a uniformly moving screw dislocation and interface rigid lines in two dissimilar anisotropic materials are investigated.
研究了各向异性双材料中匀速运动螺型位错与界面刚性线的干涉问题。
4)  screw dislocation arrays
螺型位错阵列
5)  Screw dislocation
螺旋位错
1.
First, {104} plane of calcite crystallite containing screw dislocation is simulated by HyperChem according to growth shape of calcite.
首先,根据方解石晶体生长形貌,通过分子模拟软件生成有螺旋位错的方解石{104}面,同时基于半经验分子轨道理论,对离解后的HEDP结构优化以获得其部分电荷分布。
2.
By observing the {100} faces morphology of DKDP crystal grown in all three dimensions with atom force microscope,screw dislocations were found.
采用原子力显微镜观测全方位生长的DKDP晶体的{100}面形貌,发现有螺旋位错,由此推断DKDP晶体{100}面以螺旋位错机制生长;利用同步辐射X射线白光形貌术观测了DKDP晶体缺陷,探讨了不同生长条件及生长阶段对晶体完整性的影响。
3.
On the crystal surfaces of the beryl crystal at {0001},{1010},{1121} occur universally screw dislocation,constriction screw dislocation,stacking fault,and contact twin that serve as the major step like source for the growth of beryl crystal.
在绿柱石晶体的 { 0 0 0 1}、{ 10 10 }、{ 112 1}面上 ,普遍发育螺旋位错、束合螺旋位错、层错及接触双晶 ,它们共同构成了绿柱石晶体生长的主要台阶源。
6)  screw dislocation
螺位错
1.
These cordis-shape protuberances are different from the Frank-Read circle arose from the anti-direction double screw dislocation.
用原子力显微镜在有机非线性光学晶体CdHg(SCN)4(H6C2OS)2(CMTD)的(001)面上观察到了许多奇特的心形螺旋生长丘,这种心形线不同于由反向双螺位错发展而成的瑞德环(Frank Read)。
2.
The nteraction of a screw dislocation with a conducting interfacial edge crack is considered in a semi-infinite piezoelectric bi-material.
研究了半无限大压电双材料中导电界面边裂纹与螺位错之间的相互作用问题。
3.
This paper is concerned with a screw dislocation in a magneto-electro-elastic(MEE) bi-material.
研究无限大磁电双材料中的螺位错问题。
补充资料:螺型位错
分子式:
CAS号:

性质:又称螺旋位错。一个晶体的某一部分相对于其余部分发生滑移,原子平面沿着一根轴线盘旋上升,每绕轴线一周,原子面上升一个晶面间距。在中央轴线处即为一螺型位错。围绕位错线原子的位移矢量称为滑移矢量或伯格斯(Burgers)矢量,对于螺型位错,位错线平行于伯格斯矢量。

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