说明:双击或选中下面任意单词,将显示该词的音标、读音、翻译等;选中中文或多个词,将显示翻译。
您的位置:首页 -> 词典 -> 螺型位错生长理论
1)  screw dislocation theory of crystal growth
螺型位错生长理论
2)  screw dislocation growth mechanism
螺旋位错生长机理
3)  screw dislocation
螺型位错
1.
The elasticity field for screw dislocation in cubic quasi-crystal;
立方准晶中螺型位错的弹性场
2.
This paper studied the interaction of a generalized screw dislocation with interfacial conducting rigid line inclusions by using analysis continuation principle of functions of complex variable,and the general solution of the problem was presented.
采用复变函数解析延拓原理,研究了电磁材料中压电磁螺型位错和共线界面刚性线的磁电弹耦合干涉效应并得到该问题的一般解答。
3.
The electroelastic interaction of a screw dislocation inside a circular inclusion with interfacial cracks in piezoelectric composite materials under anti_plane shear and in_plane electric loads at infinity is investigated.
研究了无穷远纵向剪切和面内电场共同作用下,压电复合材料圆形夹杂中螺型位错与界面裂纹的电弹耦合干涉作用。
4)  BCF dislocation theory
BCF位错理论模型
5)  dislocation theory
位错理论
1.
Research on mechanism of vibration time-effect based on dislocation theory;
基于位错理论的振动消应力的机理研究
2.
Developments of dislocation theory, electronic microscopy and fracture theory all contribute to the investigation of this field.
50年代以来,位错理论的发展,电子显微镜的诞生,断裂学
3.
Based on slip line and stacking fault appeared on the silicon surface,the dislocation theory is used to analyze the reasons of causing dislocation and stacking fault during the bending process and study their influence on the laser bending,according to the experiment of thin silicon laser bending.
基于开展的薄硅片长脉冲激光弯曲成形实验,针对弯曲样品表面产生的滑移线和堆垛层错缺陷,结合实验所用规格硅片弯曲角度不超过35°的现象,运用位错理论分析在弯曲过程中硅晶体产生位错、层错现象的原因以及位错对激光弯曲成形的影响。
6)  Dislocation model
位错理论
1.
The historic process of dislocation model applied in geodetic field is analyzed and discussed.
分析和讨论了位错理论模型的发展历史和应用领域 ,采用走滑和倾滑位错理论模型对青藏高原东北缘的多组断层活动产生的三维形变场进行了数值模拟研究 ,并将数值模拟结果与该地区 1999~ 2 0 0 1年间的GPS观测结果进行了对比分析。
补充资料:螺型位错
分子式:
CAS号:

性质:又称螺旋位错。一个晶体的某一部分相对于其余部分发生滑移,原子平面沿着一根轴线盘旋上升,每绕轴线一周,原子面上升一个晶面间距。在中央轴线处即为一螺型位错。围绕位错线原子的位移矢量称为滑移矢量或伯格斯(Burgers)矢量,对于螺型位错,位错线平行于伯格斯矢量。

说明:补充资料仅用于学习参考,请勿用于其它任何用途。
参考词条