1) emitting screw dislocation
发射螺位错
2) dislocation emission
位错发射
1.
TEM observation of dislocation emission and nano-crack nucleation;
位错发射与纳米裂纹形核的TEM实验观察
2.
The results showed that chemisorption of Hg atoms could facilitate dislocation emission and motion.
结果表明：加载裂纹吸附Hg原子后能促进位错的发射、增殖和运动；当吸附促进位错发射和运动达到临界状态时，脆性微裂纹就在原裂纹顶端或在无位错区中形核并解理扩展。
3.
The results showed that chemisorption of liquid metal atoms could facilitate dislocation emission,multiplication and motioll.
结果表明：液体金属吸附后能促进位错的发射、增殖和运动；当吸附促进位错发射和运动达到临界状态时，脆性微裂纹就在原裂纹顶端或在无位错区中形核并解理扩展。
3) emissary dislocations
发射位错
4) dislocation emission and motion
位错发射和运动
1.
In situ tensile test in TEM showed that a dislocation-free zone (DFZ) formed ahead of a loaded crack tip when dislocation emission and motion reached equilibrium under keeping constant displacement, and a microcrack initiated after the dislocation emission and motion developed to a certain condition through increasing load.
结果表明，氢能促进位错的发射、增殖和运动 和未充氢纯Ｎｉ相比，充氢试样在更低的外应力下位错就会发射和运动，当氢促进的位错发射和运动到临界条件时就会使氢致裂纹形核、扩展，导致低应力脆断。
5) Screw dislocation
螺旋位错
1.
First, {104} plane of calcite crystallite containing screw dislocation is simulated by HyperChem according to growth shape of calcite.
首先,根据方解石晶体生长形貌,通过分子模拟软件生成有螺旋位错的方解石{104}面,同时基于半经验分子轨道理论,对离解后的HEDP结构优化以获得其部分电荷分布。
2.
By observing the {100} faces morphology of DKDP crystal grown in all three dimensions with atom force microscope,screw dislocations were found.
采用原子力显微镜观测全方位生长的DKDP晶体的{100}面形貌,发现有螺旋位错,由此推断DKDP晶体{100}面以螺旋位错机制生长;利用同步辐射X射线白光形貌术观测了DKDP晶体缺陷,探讨了不同生长条件及生长阶段对晶体完整性的影响。
3.
On the crystal surfaces of the beryl crystal at ｛0001｝,｛1010｝,｛1121｝ occur universally screw dislocation,constriction screw dislocation,stacking fault,and contact twin that serve as the major step like source for the growth of beryl crystal.
在绿柱石晶体的 { 0 0 0 1}、{ 10 10 }、{ 112 1}面上 ,普遍发育螺旋位错、束合螺旋位错、层错及接触双晶 ,它们共同构成了绿柱石晶体生长的主要台阶源。
6) screw dislocation
螺型位错
1.
The elasticity field for screw dislocation in cubic quasi-crystal;
立方准晶中螺型位错的弹性场
2.
This paper studied the interaction of a generalized screw dislocation with interfacial conducting rigid line inclusions by using analysis continuation principle of functions of complex variable,and the general solution of the problem was presented.
采用复变函数解析延拓原理,研究了电磁材料中压电磁螺型位错和共线界面刚性线的磁电弹耦合干涉效应并得到该问题的一般解答。
3.
The electroelastic interaction of a screw dislocation inside a circular inclusion with interfacial cracks in piezoelectric composite materials under anti_plane shear and in_plane electric loads at infinity is investigated.
研究了无穷远纵向剪切和面内电场共同作用下,压电复合材料圆形夹杂中螺型位错与界面裂纹的电弹耦合干涉作用。
补充资料：螺型位错
分子式：
CAS号：
性质：又称螺旋位错。一个晶体的某一部分相对于其余部分发生滑移，原子平面沿着一根轴线盘旋上升，每绕轴线一周，原子面上升一个晶面间距。在中央轴线处即为一螺型位错。围绕位错线原子的位移矢量称为滑移矢量或伯格斯(Burgers)矢量，对于螺型位错，位错线平行于伯格斯矢量。
CAS号：
性质：又称螺旋位错。一个晶体的某一部分相对于其余部分发生滑移，原子平面沿着一根轴线盘旋上升，每绕轴线一周，原子面上升一个晶面间距。在中央轴线处即为一螺型位错。围绕位错线原子的位移矢量称为滑移矢量或伯格斯(Burgers)矢量，对于螺型位错，位错线平行于伯格斯矢量。
说明：补充资料仅用于学习参考，请勿用于其它任何用途。
参考词条